Results 151 to 160 of about 2,690,244 (280)

Imaging the Thickness‐Dependent Formation of Schottky Barriers in Metal–Semiconductor van der Waals Heterostructures

open access: yesAdvanced Functional Materials, EarlyView.
Using nanobeam photoemission, we demonstrate imaging of the in‐plane and out‐of‐plane electric field landscape within a metal–semiconductor van der Waals heterostructure. We provide evidence for Schottky barrier formation that depends on the semiconductor thickness. ABSTRACT Achieving high‐performance optoelectronic devices based on two‐dimensional van
Dario Mastrippolito   +17 more
wiley   +1 more source

Chemical Control of Space Charge Barriers and Grain Boundary Resistances in Polycrystalline Ionic Conductors

open access: yesAdvanced Functional Materials, EarlyView.
Grain boundaries (GBs) in polycrystalline materials often block charge transport and drive degradation. Using Gd‐doped CeO2 as a model electrolyte used in fuel/electrolysis cells, we developed a core‐shell infiltration method to selectively modify GB chemistry and space charge potential, achieving orders‐of‐magnitude ionic conductivity changes.
Z. Sha   +5 more
wiley   +1 more source

Broadband Silicon‐On‐Glass Reflective Dielectric Metasurface for THz Beam Steering in 6G Wireless Networks

open access: yesAdvanced Functional Materials, EarlyView.
A CMOS‐compatible, all‐dielectric Silicon‐on‐Glass reflective metasurface enables low–loss terahertz wavefront control for future 6G wireless communication. Mie‐resonant silicon pillars provide full phase coverage near 500 GHz, achieving experimentally validated single‐, dual‐, and five‐beam steering with sub‐1.5° angular error and less than 3 dB ...
Rithwik Premanand   +6 more
wiley   +1 more source

Disentangling Bulk and Surface Contributions to Charge and Discharge Fading in High‐Voltage LiCoO2

open access: yesAdvanced Functional Materials, EarlyView.
High‐voltage operation of LiCoO2 accelerates capacity fading through bulk and surface degradation. By introducing a LiTaO3 coating to selectively suppress surface degradation, bulk and surface contributions to charge and discharge fading are decoupled.
Hyungjoon Moon   +6 more
wiley   +1 more source

Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing

open access: yesAdvanced Functional Materials, EarlyView.
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin   +7 more
wiley   +1 more source

Dynamically Actuated Reconfigurable Topographical Surface Enables Active Control of Implant‐Associated Infections

open access: yesAdvanced Functional Materials, EarlyView.
A dynamically actuated reconfigurable topographical surface (DARTS) integrates contact‐mediated bactericidal nanotopography with programmable mechanical actuation to actively disrupt bacterial biofilms. Dynamic surface reconfiguration enhances bacterial killing and suppresses implant‐associated infections in vivo, providing a new strategy for active ...
Mohammad Asadi Tokmedash   +4 more
wiley   +1 more source

Boosting Conversion Efficiency in Zn3P2/InP Solar Cells Via Nanoscale Junction Engineering

open access: yesAdvanced Functional Materials, EarlyView.
This study demonstrates the efficacy of selective area epitaxy (SAE) in enhancing the conversion efficiency of a Zn3P2${\rm Zn}_3{\rm P}_2$/InP heterojunction solar cell. The impact of the SAE pattern dimensions on the performance parameters is investigated. Small size opening limits Jsc because of current crowding whereas large size opening limits Voc
Raphael Lemerle   +14 more
wiley   +1 more source

Domain Engineering and Anisotropic Domain‐Wall Photovoltaic Effects in Ferroelectric SnS

open access: yesAdvanced Functional Materials, EarlyView.
The bulk photovoltaic effect at domain walls in the in‐plane ferroelectric 2D semiconductor SnS is investigated using periodic domain structures. Unlike conventional oxide ferroelectrics, domain walls of SnS do not contribute to photocurrent generation perpendicular to the domain walls.
Ryo Nanae   +17 more
wiley   +1 more source

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