Results 121 to 130 of about 133,474 (159)

Defect engineering in germanium

physica status solidi (a), 2013
State of the art nanoelectronic devices are mainly fabricated on silicon (Si). In order to take advantage of the properties of germanium (Ge) in advanced electronic nanodevices all steps of device fabrication must be controlled. This, in particular, concerns the diffusion, doping, and activation of dopants in Ge.
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Engineered cartilage heals skull defects

American Journal of Orthodontics and Dentofacial Orthopedics, 2010
The purposes of this study were to differentiate embryonic limb bud cells into cartilage, characterize the nodules produced, and determine their ability to heal a mouse skull defect.Aggregated mouse limb bud cells (E12-E12.5), cultured in a bioreactor for 3 weeks, were analyzed by histology or implanted in 6 skull defects. Six controls had no implants.
Lan, Doan, Connor, Kelley, Heather, Luong, Jeryl, English, Hector, Gomez, Evan, Johnson, Dianna, Cody, Pauline Jackie, Duke   +7 more
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Fundamentals and engineering of defects

Progress in Crystal Growth and Characterization of Materials, 2016
Abstract An overview of the important defect types, their origins and interactions during the bulk crystal growth from the melt and selected epitaxial processes is given. The equilibrium and nonequilibrium thermodynamics, kinetics and interaction principles are considered as driving forces of defect generation, incorporation and assembling.
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Surfaces and interfaces for controlled defect engineering

2008 9th International Conference on Solid-State and Integrated-Circuit Technology, 2008
ABSTRACTThe behavior of point defects within silicon can be changed significantly by controlling the chemical state at the surface. In ultrashallow junction applications for integrated circuits, such effects can be exploited to reduce transient enhanced diffusion, increase dopant activation, and reduce end-of-range damage.
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Defect Control and Defect Engineering of Transition-metal Silicides

MRS Proceedings, 2006
AbstractThe microstructure, defect structure and thermoelectric properties of two different semiconducting transition-metal silicides, ReSi1.75 and Ru2Si3 upon alloying with a substitutional element with a valence electron number different from that of the constituent metal have been investigated in order to see if the crystal and defect structures of ...
Haruyuki Inui, Katsushi Tanaka, Kyosuke Kishida   +2 more
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Defect engineering of titanium dioxide: full defect disorder

Advances in Applied Ceramics, 2012
AbstractTitanium dioxide (rutile) is known as n-type semiconductor. Recent studies show that prolonged oxidation of pure n-type TiO2 may lead to its conversion into a p-type semiconductor. It has been documented that the conversion is associated with the formation of titanium vacancies.
Bak, Tadeusz (R14000), Bogdanoff, Peter D., Fiechter, Sebastian, Nowotny, Janusz (R13999)   +3 more
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Defect engineered Ti-MOFs and their applications

Chemical Society Reviews
This review systematically classifies Ti-MOFs by node types, surveys defect synthesis and applications, discusses structural challenges, and inspires new defect engineering pathways.
Guo-Ying Han, Mingshuo Sun, Ruixin Zhao, Qazi Mohammad Junaid, Guozhen Hou, Numan Zada Khan Mohmand, Chunmei Jia, Yiwei Liu, Pascal Van Der Voort, Lei Shi, Xiao Feng   +10 more
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Surface-assisted defect engineering of point defects in ZnO

Applied Physics Letters, 2016
Semiconductor surfaces facilitate the injection of highly mobile point defects into the underlying bulk, thereby offering a special means to manipulate bulk defect concentrations. The present work combines diffusion experiments and first-principles calculations for polar ZnO (0001) surface to demonstrate such manipulation.
Prashun Gorai, Elif Ertekin, Edmund G. Seebauer   +2 more
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Defect engineering in SiGe heterostructures

1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings, 2002
With the integration of heterostructures into the established silicon technology (a promising approach is the SiGe system) frequencies become attainable which used to be the exclusive domain of compound semiconductors. Heterostructures also make a reduction of the vertical device dimension possible.
H. Richter, A. Fischer, G. Kissinger, D. Kruger   +3 more
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RADIATION DEFECT ENGINEERING

International Journal of High Speed Electronics and Systems, 2005
V. KOZLOVSKI, V. ABROSIMOVA
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