Results 1 to 10 of about 5,400,490 (233)
Noisy images will inevitably exist in the image acquisition process of the aluminum profile surface (APS) due to the limitations of the imaging system.
Renxiang Chen +4 more
semanticscholar +1 more source
Defect profiling in FEFET Si:HfO2 layers [PDF]
Ferroelectric Si-doped HfO2 is a promising candidate for future generation memory devices. However, such devices are vulnerable to significant threshold voltage shifts resulting from charge trapping in oxide defects. We use complementary characterization and modeling techniques to reveal significant electron trapping/de-trapping behavior, together with
B. J. O'Sullivan +17 more
openaire +1 more source
Using ISU-GAN for unsupervised small sample defect detection
Surface defect detection is a vital process in industrial production and a significant research direction in computer vision. Although today’s deep learning defect detection methods based on computer vision can achieve high detection accuracy, they are ...
Yijing Guo +6 more
doaj +1 more source
A Feature-Oriented Reconstruction Method for Surface-Defect Detection on Aluminum Profiles
The number of defect samples on the surface of aluminum profiles is small, and the distribution of abnormal visual features is dispersed, such that the existing supervised detection methods cannot effectively detect undefined defects.
Shancheng Tang +5 more
doaj +1 more source
Determination of defect content and defect profile in semiconductor heterostructures
In this article we present an overview of the technique to obtain the defects depth profile and width of a deposited layer and multilayer based on positron annihilation spectroscopy. In particular we apply the method to ZnO and ZnO/ZnCdO layers deposited on sapphire substrates.
Zubiaga, A., Garcia, J.A., Plazaola, F., Zuñiga-Perez, J., +1 more
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Electronic spectra of polyatomic molecules with resolved individual rotational transitions [PDF]
The density of rotational transitions for a polyatomic molecule is so large that in general many such transitions are hidden under the Doppler profile, this being a fundamental limit of conventional high resolution electronic spectroscopy.
Aliev M. R. +6 more
core +1 more source
Author Correction: Universality of defect-skyrmion interaction profiles [PDF]
The original version of this Article contained an error in the Acknowledgements, which incorrectly omitted from the end the following: ‘We acknowledge the computing time granted by the JARA-HPC Vergabegremium and VSR commission on the supercomputer JURECA at Forschungszentrum Jülich.’ This has been corrected in both the PDF and HTML versions of the ...
Imara Lima Fernandes +3 more
openaire +3 more sources
Pulse recovery time in semiconducting devices depends strongly on minority carrier lifetime, bandgap-type-dependent recombination, impurity concentration, and subband placement.
John Keerthi Paul Bhamidipati +2 more
doaj +1 more source
Characterization of defects in plates using shear and Lamb waves [PDF]
This work investigates the interaction of shear and Lamb waves with different kinds of defects in plates, in view of applications to defect characterization purposes. Using a finite element model, the reflection and transmission coefficients of shear and
Achillopoulou, Dimitra, Pau, Annamaria
core +1 more source
Visual tolerance analysis for engineering optimization
Classic methodologies of DOE are widely applied in design, manufacture, quality management and related fields. The resulting data can be analysed with linear modeling methods such as multiple regression which generates a set of ...
Zhou Wei W., Moore M., Kussener F.
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