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Oxygen defect profile in implanted garnet
Journal of Magnetism and Magnetic Materials, 1983Abstract For the first time direct measurements are presented of an oxygen defect profile, produced through implantation, in a bubble garnet material. An analysis of oxygen defects and of damage on heavy atoms profiles is given as a function of depth for the neon implantation at a dose of 2 × 10 14 cm -2 by doing channeling experiments with ...
P. Gerard, P. Martin, R. Danielou
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Unified detection method of aluminium profile surface defects: Common and rare defect categories
Optics and Lasers in Engineering, 2020Abstract It is difficult to achieve automatic visual detection of aluminium profile surface defects (APSD) owing to their various categories, irregular shapes, random distribution, and unbalanced samples. Utilising the attention mechanism, the unified detection method attempts to address these challenges for both common and rare defects. We formulate
Defu Zhang +4 more
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Defect-Related Physical-Profile-Based X-Ray and Neutron Line Profile Analysis
Metallurgical and Materials Transactions A, 2009Diffraction line broadening is caused by different defects present in crystalline materials: (1) small coherent domains, (2) dislocations, (3) other types of microstrains, (4) twin boundaries, (5) stacking faults, (6) chemical inhomogeneities, and (7) grain-to-grain second-order internal stresses.
Tamás Ungár +2 more
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Insight - Non-Destructive Testing and Condition Monitoring, 2023
In order to obtain defect information quickly and effectively and improve the accuracy and evaluation ability of traditional electromagnetic non-destructive testing (NDT), an electromagnetic image recognition method for the defect profile based on ...
Feng Jiang, Rongxi Hou, Li Tao
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In order to obtain defect information quickly and effectively and improve the accuracy and evaluation ability of traditional electromagnetic non-destructive testing (NDT), an electromagnetic image recognition method for the defect profile based on ...
Feng Jiang, Rongxi Hou, Li Tao
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IEEE Transactions on Instrumentation and Measurement, 2023
The magnetic flux leakage (MFL) defect detection of oil and gas pipelines faces two tasks, defect type identification and defect size and shape estimation.
Min Zhang +5 more
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The magnetic flux leakage (MFL) defect detection of oil and gas pipelines faces two tasks, defect type identification and defect size and shape estimation.
Min Zhang +5 more
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IEEE Transactions on Instrumentation and Measurement, 2021
Defect opening profile recognition is a common problem in magnetic flux leakage (MFL) detection, while the traditional defect edge detection methods are not accurate enough.
Yue Long +4 more
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Defect opening profile recognition is a common problem in magnetic flux leakage (MFL) detection, while the traditional defect edge detection methods are not accurate enough.
Yue Long +4 more
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Molecular profiling of intrabony defects' gingival crevicular fluid
Journal of Periodontal Research, 2021AbstractAimTo profile, for the first time, the gingival crevicular fluid (GCF) of intrabony defects against a wide array of inflammatory and regenerative markers.Materials and methodsTwenty‐one patients contributed one intrabony defect and one periodontally healthy site. Clinical and radiographic measures were obtained.
Vasiliki P. Koidou +4 more
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Extreme ultraviolet mask defect simulation: Low-profile defects
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2000An assessment is made of the tendency of low-profile EUV multilayer mirror defects to print as a function of their height, width, and proximity to features. The study is based on rigorous electromagnetic simulation with TEMPEST and aerial image calculation with SPLAT.
Tom Pistor +2 more
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Profiling of optically active defects
IEEE Transactions on Electron Devices, 1980A new method for profiling of optically active defects is presented. Traps in a depletion region are illuminated with chopped extrinsic light (h\nu . The resulting ac photocurrent in the external circuit originates from a small part of the depleted layer.
D.W. Greve, W.E. Dahlke
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