Results 191 to 200 of about 3,437 (296)

Historical Foundation and Practical Guideline for Ferroelectric Switching Kinetic Studies

open access: yesAdvanced Functional Materials, EarlyView.
The P and U pulses in the conventional PUND measurements are not identical because of the interplay between switching current and the measurement circuit components. This circuit effect can lead to a shift in polarization transients and misinterpreted physics in the switching kinetics.
Yi Liang, Pat Kezer, John T. Heron
wiley   +1 more source

Dipole‐Engineered Conductive Additives for Ultrastable Interphase Evolution in High‐Areal‐Capacity Silicon Anodes

open access: yesAdvanced Functional Materials, EarlyView.
In the work reported herein, dipole‐engineered sulfonated carbon nanofibers enable conductive additives to actively regulate interphase formation in silicon anodes. Polar sulfonyl groups guide electrolyte decomposition to form a compact LiF‐rich interphase while promoting robust integration with silicon.
Song Kyu Kang   +6 more
wiley   +1 more source

Long‐Range Coordination Environment Modulates Single‐Atom Local States and Systemic Impact on CO2 Photoconversion

open access: yesAdvanced Functional Materials, EarlyView.
Terminal groups on Cu porphyrins modulate the electronic states of single‐atom Cu centers through a long‐range electronic effect, without altering the Cu coordination geometry. Meanwhile, a multi‐descriptor framework is established that incorporates porphyrin regulation, hybrid catalyst properties, and CO2 photoreduction capabilities.
Yi Zhang   +13 more
wiley   +1 more source

Tailoring Li‐ion Storage and Transport in Two‐Dimensional Conjugated Metal‐Organic Frameworks via Precise Nitrogen Incorporation

open access: yesAdvanced Functional Materials, EarlyView.
Two nitrogen‐doped 2D conjugated metal‐organic frameworks (2D c‐MOFs, namely Cu‐Nx‐OHBA, x = 2 or 4) are synthesized, featuring precise nitrogen incorporation via rational ligand design. The Cu‐Nx‐OHBA 2D c‐MOFs are largely tailorable by varying skeletal nitrogen density, with respect to electrical conductivity, Li‐storage capacitance, and Li‐transport
Xiangyu Li   +7 more
wiley   +1 more source

Unraveling the Electronic Structure of Silicon Vacancy Centers in 4H‐SiC

open access: yesAdvanced Functional Materials, EarlyView.
The electronic structure of the silicon vacancy in 4H‐SiC is probed via transient absorption spectroscopy, uncovering previously inaccessible excited states of the quartet and doublet spin channels, including the V2' transition. In combination with theoretical analysis, a comprehensive picture of the electronic structure is established.
Ali Tayefeh Younesi   +9 more
wiley   +1 more source

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