Results 131 to 140 of about 75,109 (198)

Inhomogeneous broadening in the time domain: Gauss-Lorentz, Gauss-Drude and Gauss-Debye material models. [PDF]

Nanophotonics
Prokopeva LJ, Kildishev AV.
europepmc   +1 more source

Designing Asymmetric Memristive Behavior in Proton Mixed Conductors for Neuromorphic Applications

Advanced Functional Materials, EarlyView.
Protonic devices that couple ionic and electronic transport are demonstrated as bioinspired neuromorphic elements. The devices exhibit rubber‐like asymmetric memristive behavior with slow voltage‐driven conductance increase and rapid relaxation, enabling simplified read–write operation.
Nada H. A. Besisa, Masaki Tsuji, Yoshihiro Furue, Yifan Geng, Satya P. Pati, Satoshi Hamasuna, Takeaki Yajima   +6 more
wiley   +1 more source

Unraveling electronic correlations in warm dense quantum plasmas. [PDF]

Nat Commun
Dornheim T, Döppner T, Tolias P, Böhme MP, Fletcher LB, Gawne T, Graziani FR, Kraus D, MacDonald MJ, Moldabekov ZA, Schwalbe S, Gericke DO, Vorberger J.   +12 more
europepmc   +1 more source

Facet‐Engineered S‐Scheme Heterostructure With Enhanced Active Sites for Efficient Photocatalytic Degradation of Organic Contaminants

Advanced Functional Materials, EarlyView.
The facet‐engineered ZnO/Zn3In2S6 heterostructure, dominated by {001} plane coupling, exposes abundant unsaturated Zn sites with elongated Zn─O bonds, directing photoexcited charge carriers along an S‐scheme pathway and suppressing recombination. Enhanced interfacial Zn adsorption toward bisphenol A and methylene blue further synergistically promotes ...
Yang Yang, Zisheng Du, Hongyuan Yang, Debabrata Bagchi, Ruotao Yang, Prashanth W. Menezes, Sugang Meng   +6 more
wiley   +1 more source

Canonicalizing Zeta Generators: Genus Zero and Genus One. [PDF]

Commun Math Phys
Dorigoni D, Doroudiani M, Drewitt J, Hidding M, Kleinschmidt A, Schlotterer O, Schneps L, Verbeek B.   +7 more
europepmc   +1 more source

Conductance‐Dependent Photoresponse in a Dynamic SrTiO3 Memristor for Biorealistic Computing

Advanced Functional Materials, EarlyView.
A nanoscale SrTiO3 memristor is shown to exhibit dynamic synaptic behavior through the interaction of local electrical and global optical signals. Its photoresponse depends quantitatively on the conductance state, which evolves and decays over tunable timescales, enabling ultralow‐power, biorealistic learning mechanisms for advanced in‐memory and ...
Christoph Weilenmann, Hanglin He, Marko Mladenović, Till Zellweger, Kevin Portner, Klemens Bauer, Guillaume Bellec, Mathieu Luisier, Alexandros Emboras   +8 more
wiley   +1 more source

Geometric Neural Ordinary Differential Equations: From Manifolds to Lie Groups. [PDF]

Entropy (Basel)
Wotte YP, Califano F, Stramigioli S.
europepmc   +1 more source

Trap‐Assisted Transport and Neuromorphic Plasticity in Lead‐Free 2D Perovskites PEA2SnI4

Advanced Functional Materials, EarlyView.
An artificial retina built from lead‐free layered perovskite (PEA)2SnI4 converts light input into a persistent photocurrent and sums successive flashes over time. Micro/nanocrystals integrated on electrodes act as synapse‐like pixels that perform temporal integration directly in hardware. This in‐sensor preprocessing merges detection and computation on
Ofelia Durante, Valeria Demontis, Jonas Riisnaes Karl, Lam Hoi Tung, Sebastiano De Stefano, Daniela Marongiu, Adolfo Mazzotti, Aditya Bhardwaj, Francesco Mattana, Elisa Pili, Selene Matta, Federico Paolucci, Michele Saba, Andrea Mura, Giovanni Bongiovanni, Monica F Craciun, Saverio Russo, Antonio Di Bartolomeo   +17 more
wiley   +1 more source

Mock Modularity at Work, or Black Holes in a Forest. [PDF]

Entropy (Basel)
Alexandrov S.
europepmc   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source