Results 241 to 250 of about 264,840 (333)

An Engineered Living Material With Pro‐Angiogenic Activity Inducible by Near‐Infrared Light

open access: yesAdvanced Functional Materials, EarlyView.
NIR‐responsive engineered living materials (ELMs) for controlled angiogenesis: Near‐infrared (800 nm) light activates engineered probiotic bacteria within alginate‐based living materials to secrete a blood vessel‐regenerating protein. The released protein promotes pro‐angiogenic effects in endothelial networks and chick chorioallantoic membranes.
Anwesha Chatterjee   +4 more
wiley   +1 more source

Elzaki Transform Approach for Solving Linear Proportional Delay Differential Equations

open access: hybrid
L. N. Sanda   +5 more
openalex   +2 more sources

Triplet‐Triplet Annihilation Enhances Photochemical Curing Contrast for Vat‐Based 3D Printing

open access: yesAdvanced Functional Materials, EarlyView.
Triplet–triplet annihilation photopolymerization (TTAP) resins enhance curing contrast for digital light processing (DLP) 3D printing compared to conventional Type I and II photopolymerizations at matched optical densities. By exploiting a superlinear initiation response, TTAP preserves fine details, allowing reliable fabrication of complex structures ...
Connor J. O'Dea   +2 more
wiley   +1 more source

Highly Dispersive Optical Solitons with Differential Group Delay for Kerr Law of Self-Phase Modulation by Sardar Sub-Equation Approach

open access: diamond
Anwar Ja' afar Mohamad Jawad   +4 more
openalex   +2 more sources

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

Multibit Ferroelectric HfZrO Memcapacitor for Non‐Volatile Analogue Memory and Reconfigurable Electronics

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric memcapacitors enable non‐volatile, voltage‐programmable capacitance tuning for adaptive electronics. A TiN/HfZrO/TiN device stack demonstrates more than eight stable capacitance states within a 24 pF memory window in compact 60 ×$\times$ 60 μm2$\umu{\rm m}^{2}$ devices at low operating voltages.
Deepika Yadav   +6 more
wiley   +1 more source

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