Results 241 to 250 of about 264,840 (333)
An Engineered Living Material With Pro‐Angiogenic Activity Inducible by Near‐Infrared Light
NIR‐responsive engineered living materials (ELMs) for controlled angiogenesis: Near‐infrared (800 nm) light activates engineered probiotic bacteria within alginate‐based living materials to secrete a blood vessel‐regenerating protein. The released protein promotes pro‐angiogenic effects in endothelial networks and chick chorioallantoic membranes.
Anwesha Chatterjee +4 more
wiley +1 more source
Elzaki Transform Approach for Solving Linear Proportional Delay Differential Equations
L. N. Sanda +5 more
openalex +2 more sources
Two Schemes of Impulsive Runge–Kutta Methods for Linear Differential Equations with Delayed Impulses [PDF]
Gui-Lai Zhang, Chao Liu
openalex +1 more source
Triplet‐Triplet Annihilation Enhances Photochemical Curing Contrast for Vat‐Based 3D Printing
Triplet–triplet annihilation photopolymerization (TTAP) resins enhance curing contrast for digital light processing (DLP) 3D printing compared to conventional Type I and II photopolymerizations at matched optical densities. By exploiting a superlinear initiation response, TTAP preserves fine details, allowing reliable fabrication of complex structures ...
Connor J. O'Dea +2 more
wiley +1 more source
Time delay as the origin of oscillations in anodic Si electrodissolution. [PDF]
Murakami Y, Krischer K.
europepmc +1 more source
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner +14 more
wiley +1 more source
A State-Space Framework for Parallelizing Digital Signal Processing in Coherent Optical Receivers. [PDF]
Wang J, Wang Z, Liu D.
europepmc +1 more source
Ferroelectric memcapacitors enable non‐volatile, voltage‐programmable capacitance tuning for adaptive electronics. A TiN/HfZrO/TiN device stack demonstrates more than eight stable capacitance states within a 24 pF memory window in compact 60 ×$\times$ 60 μm2$\umu{\rm m}^{2}$ devices at low operating voltages.
Deepika Yadav +6 more
wiley +1 more source

