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Boiling point, 1991 Some of the next articles are maybe not open access.
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Proceedings of the 3rd Innovations in Theoretical Computer Science Conference, 2012
We initiate a principled study of graph densification. Given a graph G the goal of graph densification is to come up with another graph H that has significantly more edges than G but nevertheless approximates G well with respect to some set of test functions.
Moritz Hardt +2 more
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We initiate a principled study of graph densification. Given a graph G the goal of graph densification is to come up with another graph H that has significantly more edges than G but nevertheless approximates G well with respect to some set of test functions.
Moritz Hardt +2 more
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2018
Published as part of Telnov, Dmitry & Ghahari, Hassan, 2018, An annotated checklist of the Anthicidae and pediline Pyrochroidae (Insecta: Coleoptera) of Iran, with thirteen new country records, pp.
Telnov, Dmitry, Ghahari, Hassan
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Published as part of Telnov, Dmitry & Ghahari, Hassan, 2018, An annotated checklist of the Anthicidae and pediline Pyrochroidae (Insecta: Coleoptera) of Iran, with thirteen new country records, pp.
Telnov, Dmitry, Ghahari, Hassan
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Reaction Densification of α′‐SiAION: II, Densification Behavior
Journal of the American Ceramic Society, 1995Reaction hot‐pressing behavior of α‐Si 3 N 4 , Al 2 O 3 , A1N, and M 2 O Z powder mixtures (M
Menon, Mohan, Chen, I-Wei
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Journal of The Electrochemical Society, 1981
Semi‐insulating polycrystalline silicon (SIPOS) can be used as part of a passivation scheme on semiconductor devices. During processing the film experiences temperatures several hundred degrees higher than the SIPOS deposition temperature of 640°C. We have investigated the effect of high temperature anneals on the physical properties of SIPOS films ...
H. R. Maxwell, W. R. Knolle
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Semi‐insulating polycrystalline silicon (SIPOS) can be used as part of a passivation scheme on semiconductor devices. During processing the film experiences temperatures several hundred degrees higher than the SIPOS deposition temperature of 640°C. We have investigated the effect of high temperature anneals on the physical properties of SIPOS films ...
H. R. Maxwell, W. R. Knolle
openaire +1 more source