Results 261 to 270 of about 6,149,007 (323)

Collector depletion region investigation of SOI SiGe HBTs

2011 International Conference on Electric Information and Control Engineering, 2011
A growing interest is focused on HBT integrating with SOI CMOS in smaller scale. So IBM proposes a vertical structure of SiGe HBT. This paper proposes and analyses the space charge region, the field and depletion width model of the folded collector.
null Xiaobo Xu, null Kaixuan Xu, null Heming Zhang, null Jing Ning, null Yaoyao Lu   +4 more
openaire   +2 more sources

Depletion region effects in Mg-doped GaN

Journal of Applied Physics, 2000
The deep nature of the Mg acceptor will have important implications for the performance of high-speed GaN-based bipolar devices. In this work, the effect of the deep acceptor on the band bending within the depletion region is examined in detail.
Peter Kozodoy, Steven P. DenBaars, Umesh K. Mishra   +2 more
openaire   +2 more sources

Direct measurement of nanowire Schottky junction depletion region

Applied Physics Letters, 2011
We have used Kelvin probe force microscopy to measure the surface potential of both doped and unintentionally doped (UID) Si nanowires Schottky junctions. The imaging of the Schottky junction together with 3D potential simulation and consideration of the convolution of the scanning tip enables us to determine the real surface potential.
E. Koren, N. Berkovitch, O. Azriel, A. Boag, Y. Rosenwaks, E. R. Hemesath, L. J. Lauhon   +6 more
openaire   +2 more sources

Transport optimisation in PIN photodiodes using mixed depletion region

International Journal of Electronics Letters, 2014
Photo-generated carriers in a photodiode drift in the junction before joining the circuit. We must use a quite thin depletion region so that their transit time does not penalise the microwave response of the devices. However, when the depletion region decreases the component capacity increases, which highly limits the microwave response of this latter.
Abdelkader Aissat, Mourad El Besseghi, Didier Decoster   +2 more
openaire   +2 more sources

Reducing Depletion Region Width at Electrode Interface via a Hole-transport Layer for Over 18% Efficiency in Organic Solar Cells.

Small, 2023
The large depletion region width at the electrode interface may cause serious energy loss in charge collection of organic solar cells (OSCs), depressing the open-circuit voltage and power conversion efficiency (PCE).
Yi Yang, Bowei Xu, Jianhui Hou
semanticscholar   +1 more source

Realization of Double‐Gate Junctionless Field Effect Transistor Depletion Region for 6 nm Regime with an Efficient Layer

Physica Status Solidi (a), 2022
Herein, the authors suggest a junctionless field effect transistor with an embedded p‐type layer (EPL‐JLT) near the drain channel side, employing calibrated structure simulations to obtain a complete depletion region in a 6 nm channel length.
Mohammad Bolokian, A. Orouji, Abdollah Abbasi, Dariush Madadi   +3 more
semanticscholar   +1 more source

Reducing Shockley–Read–Hall recombination losses in the depletion region of a solar cell by using a wide-gap emitter layer

Journal of Applied Physics, 2021
The conversion efficiency of a solar cell depends on the degree of non-radiative recombination, and thus efficiency improvements can also be achieved by reducing Shockley–Read–Hall (SRH) recombination losses.
Tetsuya Nakamura, W. Yanwachirakul, M. Imaizumi, M. Sugiyama, H. Akiyama, Y. Okada   +5 more
semanticscholar   +1 more source

Influence of the depletion region in GaAs/AlGaAs quantum well nanowire photodetector

Nanotechnology, 2020
In semiconductor nanowire (NW) photodetectors, the Schottky barrier formed by the contact between metal and semiconductor can act as a depletion layer. For NW structures with a smaller diameter, the depletion region is especially important to the carrier
Xiaotian Zhu, Fengyuan Lin, Xiaoyao Chen, Zhihong Zhang, Xue Chen, Dengkui Wang, Jilong Tang, X. Fang, D. Fang, L. Liao, Zhipeng Wei   +10 more
semanticscholar   +1 more source

Ultra-high energy storage performances regulated by depletion region engineering sensitive to the electric field in PNP-type relaxor ferroelectric heterostructural films

, 2020
Based on semiconductor characteristics under a high electric field for dielectric films, PNP-type heterostructural films composed of P-type Na0.5Bi3.25La1.25Ti4O15 (P-NBLT) and N-type BaBi3.4Pr0.6Ti4O15 (N-BBPT) layers with the same Aurivillius layered ...
Jieyu Chen, Zhehong Tang, Bo Yang, Shifeng Zhao   +3 more
semanticscholar   +1 more source

Measurement of depletion region width in poled silica

Applied Optics, 2005
The width of the depletion region in fused-silica samples thermally poled during various periods of time is investigated experimentally with four previously reported characterization techniques in an attempt to unify their findings. Although all measurements give a similar width of the depletion region, it is shown that the determination of the profile
Caroline S, Franco, Gladys A, Quintero, Niklas, Myrén, Alexandre, Kudlinski, Hassina, Zeghlache, Hélio R, Carvalho, Adriana L C, Triques, Danays M, González, Paula M P, Gouvêa, Gilbert, Martinelli, Yves, Quiquempois, Bernhard, Lesche, Walter, Margulis, Isabel C S, Carvalho   +13 more
openaire   +2 more sources