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Analysis of an Approximated Model for the Depletion Region Width of Planar Junctionless Transistors [PDF]
In this paper, we investigate the accuracy of the approximated analytical model currently utilized, by many researchers, to describe the depletion region width in planar junctionless transistors (PJLT).
Arian Nowbahari +2 more
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Measurement of depletion region width in poled silica
Applied Optics, 2005The width of the depletion region in fused-silica samples thermally poled during various periods of time is investigated experimentally with four previously reported characterization techniques in an attempt to unify their findings. Although all measurements give a similar width of the depletion region, it is shown that the determination of the profile
Caroline S, Franco +13 more
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A precise scaling length for depleted regions
Solid-State Electronics, 1985Abstract A new scaling length is described that is useful in precise modeling of depletion layers. This scaling method also permits accurate empirical modeling of inversion layers associated with depleted regions.
R.D. Schrimpf, R.M. Warner
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Depletion region formation at low temperatures
1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers, 2002The response of the semiconductor device at low temperatures is limited by the time taken for the formation of the depletion region. Hence the capacitance-voltage characteristics of the semiconductor device containing a junction displays dispersion. This paper reports a study of the dispersion caused in the accumulation and depletion regions of the C-V
C.R. Viswanathan +2 more
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Raman scattering in the depletion region of GaAs
Solid State Communications, 1974Abstract We have obtained spectra for the LO phonon mode by Raman scattering associated with surface quantization of the hole states in the depletion layer of highly doped n -type GaAs samples. When semi-transparent metal contacts are employed, the zone-center LO peak shifts to higher frequency due to plasmon-phonon interaction. The observed effects
R. Tsu, H. Kawamura, L. Esaki
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Meta-analysis of depleted uranium levels in the Balkan region
Journal of Environmental Radioactivity, 2017In recent years, contradicting data has been published on the connection between the presence of depleted uranium and an increased cancer incidence among military personnel deployed in the Balkans during the 1992-1999 wars. This has led to numerous research articles investigating possible depleted uranium contamination of the afflicted regions of the ...
Larisa, Besic +3 more
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Morphine and Ethanol: Selective Depletion of Regional Brain Calcium
Science, 1974Administration of morphine or ethanol to rats produces a decrease in regional brain calcium in vivo. This effect is selectively antagonized by the stereospecific narcotic antagonist naloxone. Reserpine and the dopamine-acetaldehyde conjugate salsolinol also produce a depletion of regional brain calcium, but only the salsolinol depletion is antagonized ...
D H, Ross, M A, Medina, H L, Cardenas
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Oxygen Depleted Regions by the Theory of Krogh
Proceedings of the IEEE 32nd Annual Northeast Bioengineering Conference, 2006Oxygen depleted regions in the tissue of Krogh in cartesian coordinates is derived. Simultaneous diffusion and reaction is considered and the concentration profile solved for. Michaelis-Menten kinetics is supposed for the reaction rate. The critical distance in the tissue, less than the length of the tissue, is given by a quadratic equation.
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Geometry of depleted plasma regions in the equatorial ionosphere
Journal of Geophysical Research: Space Physics, 1983An image intensified, all‐sky, 6300‐Å airglow imaging system operating on Ascension Island is early 1981 has been used to assemble a photographic data base of several hundred airglow depletion patterns. By mapping the airglow depletion features along geomagnetic field lines to the equatorial plane, the geometrical characteristics of plasma depleted ...
Michael Mendillo, Ann Tyler
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Depletion region thicknesses in diffused junctions
IEEE Transactions on Electron Devices, 1973Closed-form expressions are derived for total thickness of the depletion region and thickness of the depletion region on the n side of the junction. The expressions are applicable to n-p junction devices with either complementary error function or Gaussian impurity distributions.
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