Results 201 to 210 of about 74,779 (303)

Atomically Precise Ag11 and Ag12 Nanocluster‐Assembled 2D Materials for Memristive and Neuromorphic Functionality

open access: yesAdvanced Materials, EarlyView.
Two‐dimensional Ag11 and Ag12 cluster‐assembled materials (CAMs) are synthesized, offering atomically precise platforms with tunable electronic properties. The resulting materials exhibit robust memristive switching and neuromorphic response, demonstrating their promise for advanced nanoelectronic and memory applications.
Noohul Alam   +7 more
wiley   +1 more source

Low Resistance Interphase Formation at the PEO‐LiTFSI|LGPS Interface in Lithium Solid‐State Batteries

open access: yesAdvanced Materials Interfaces, EarlyView.
Interfacial charge transfer and low‐resistance interphase formation between PEO‐based polymer and Li10GeP2S12 solid electrolytes are investigated using multi‐electrode impedance spectroscopy and advanced analytical techniques such as XPS and ToF‐SIMS.
Ujjawal Sigar   +6 more
wiley   +1 more source

Al2O3 Ring Array by Infiltration Synthesis in Polystyrene Antidot Template

open access: yesAdvanced Materials Interfaces, EarlyView.
Different morphologies, such as full dots for genuine PS‐b‐PMMA, residual dots for the PS antidot array (resulting from an Acetic Acid (AA) last PS‐b‐PMMA), and rings for the modified PS antidot array (derived from an O2 plasma last PS‐b‐PMMA), originated from SIS process in PS‐b‐PMMA BCP array, due to the different reaction sites for the TMA precursor
Gabriele Seguini   +7 more
wiley   +1 more source

Surface‐Anchored Microgel‐Based Films as Anti‐Icing Coatings

open access: yesAdvanced Materials Interfaces, EarlyView.
The microgel‐based anti‐icing coatings presented in this work reduce ice adhesion by up to 90% on various substrates. This effect can be attributed to the incorporated functional cationic moieties binding a lubricating layer of quasi‐liquid interfacial water.
Inga Litzen   +9 more
wiley   +1 more source

Artificial Synaptic Device Based on Self‐Aligned c‐In2O3 TFTs With an Ultrathin MgO Interlayer

open access: yesAdvanced Materials Technologies, EarlyView.
A coplanar synaptic thin‐film transistor based on crystalline In2O3 is demonstrated using a PECVD SiO2 gate insulator and an ultrathin MgO interlayer. The MgO interlayer suppresses excessive carrier density and may facilitate proton‐related interfacial polarization, resulting in stable counterclockwise hysteresis and synaptic behavior.
Samiran Roy, Jewel Kumer Saha, Jin Jang
wiley   +1 more source

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