Results 141 to 150 of about 2,766,744 (297)

Ferroelectric Hafnium Oxide: A Potential Game‐Changer for Nanoelectronic Devices and Systems

open access: yesAdvanced Electronic Materials, EarlyView.
Devices based on ferroelectric hafnium oxide have spurred interest in a wide range of nanoelectronic applications. This review focuses on the advantages and challenges of these devices, including non‐volatile memories, neuromorphic devices, sensors, actuators, and RF devices.
David Lehninger   +8 more
wiley   +1 more source

Modeling a description logic vocabulary for cancer research

open access: bronze, 2004
Frank W. Hartel   +4 more
openalex   +1 more source

High Mobility, High Carrier Density SnSe2 Field‐Effect Transistors with Ultralow Subthreshold Swing and Gate‐Controlled Photoconductance Switching

open access: yesAdvanced Electronic Materials, EarlyView.
Field‐effect transistors with layered SnSe2 channel gated by a solution top gate combine very high room‐temperature electron mobility, large on‐off current ratios, and a subthreshold swing below the thermodynamic limit at exceptionally high sheet carrier concentrations.
Yuan Huang   +3 more
wiley   +1 more source

Soft Electronic Switches and Adaptive Logic Gates Based on Nanostructured Gold Networks

open access: yesAdvanced Electronic Materials, EarlyView.
Reconfigurable threshold logic gates and reversible switches are here demonstrated on a flexible and stretchable substrate, by exploiting the adaptability of the complex network composed of gold cluster‐assembled film embedded in the polymer matrix.
Giacomo Nadalini   +5 more
wiley   +1 more source

A non-monotonic Description Logic for reasoning about typicality

open access: yesArtificial Intelligence, 2013
Laura Giordano   +3 more
semanticscholar   +1 more source

Steep‐Slope IGZO Transistor Monolithically Integrated with Initialization‐Free Ag/Ti/Hf0.8Zr0.2O2 Atomic Threshold Switch

open access: yesAdvanced Electronic Materials, EarlyView.
In this study, a steep‐slope In‐Ga‐Zn‐O (IGZO) field‐effect transistor (FET) integrated with an Ag/Ti/Hf0.8Zr0.2O2 atomic threshold switch (ATS) is presented. This device achieves sub‐60 mV dec−1 switching, combining low‐voltage ATS switching with IGZO FETs for low power applications.
Junmo Park   +7 more
wiley   +1 more source

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