Results 121 to 130 of about 113,022 (221)

Steep‐Slope IGZO Transistor Monolithically Integrated with Initialization‐Free Ag/Ti/Hf0.8Zr0.2O2 Atomic Threshold Switch

open access: yesAdvanced Electronic Materials, EarlyView.
In this study, a steep‐slope In‐Ga‐Zn‐O (IGZO) field‐effect transistor (FET) integrated with an Ag/Ti/Hf0.8Zr0.2O2 atomic threshold switch (ATS) is presented. This device achieves sub‐60 mV dec−1 switching, combining low‐voltage ATS switching with IGZO FETs for low power applications.
Junmo Park   +7 more
wiley   +1 more source

Lightweight error-tolerant edge detection using memristor-enabled stochastic computing. [PDF]

open access: yesNat Commun
Song L   +10 more
europepmc   +1 more source

Digital‐Analog Integrated Optoelectronic Memristor Based on Carbon Dot for Ternary Opto‐Electronic Logic and Sen‐Memory Applications

open access: yesAdvanced Electronic Materials, EarlyView.
Herein, the development of a protective face mask based on a hierarchically porous cerium metal‐organic framework intensifying the bacterial entrapment ability and catalytic ROS generation at ambient condition is presented. It presents almost 100% antimicrobial efficacies for different bacteria even though in insufficient light (e.g.
Jiaqi Xu   +7 more
wiley   +1 more source

A Physics‐Based Compact Model for Ferroelectric Capacitors Operating Down to Deep Cryogenic Temperatures for Applications in Analog Memory and Neuromorphic Architectures

open access: yesAdvanced Electronic Materials, EarlyView.
A compact model for ferroelectric thin‐film capacitors operating under different electric fields and temperatures is reported. The model can reproduce polarization switching down to 4 K, making them suitable for quantum computing and space technologies.
Ella Paasio   +2 more
wiley   +1 more source

Boosting Stochasticity in Ovonic Threshold Switches Through Cryogenic First Firing for Fast and Reliable Entropy Generation

open access: yesAdvanced Electronic Materials, EarlyView.
Cryogenic first firing in SiGeAsTe‐based Ovonic Threshold Switch (OTS) devices enhances stochastic switching, increasing trap generation and switching variability up to fourfold. This enables stable, high‐speed entropy generation (>20 Mbit s−1) without reference values, ensuring robustness under cycling.
Dongmin Kim   +8 more
wiley   +1 more source

An Ultrathin Optoelectronic Memristor with Dual‐Functional Photodetector and Optical Synapse Behaviors for Neuromorphic Vision

open access: yesAdvanced Electronic Materials, EarlyView.
An optoelectronic memristor based on an ultrathin periodic heterostructure is proposed. The unique structure enables the integration of multiple functionalities, including those of a photodetector, electric synapse, and optical synapse. This work provides a framework to design ultrathin, multifunctional, and energy‐efficient neuromorphic chips for ...
Lilan Zou   +4 more
wiley   +1 more source

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