Results 131 to 140 of about 184,572 (295)

Spectroscopic Evidence of Edge‐Localized States in an Antiferromagnet Topological Insulator NdBi

open access: yesAdvanced Science, EarlyView.
Using spin‐polarized scanning tunneling microscopy (STM) in conjunction with quasiparticle interference, we successfully identify distinct signatures of the ferromagnetic and antiferromagnetic terminations in NdBi, a rare‐earth monopnictide exhibiting non‐trivial topology and magnetism. We demonstrate that step edges on ferromagnetic surfaces host well‐
Avior Almoalem   +8 more
wiley   +1 more source

Dirac Surface‐State Driven Broad Spectral Band Low Quantum Energy Photoresponse in Quaternary Topological BiSbSe2Te

open access: yesAdvanced Science, EarlyView.
Quaternary topological BiSbSe2Te are synthesized and demonstrates a broad spectral band photoresponse, ranging from infrared to terahertz and to millimeter waves, with a particular excellence on detection of low quantum energy terahertz photons. The observed photoresponse is attributed to the excitation of plasmonic nonequilibrium electrons originating
Tianning Zhang   +14 more
wiley   +1 more source

El extraño caso del detective que volvió de su propia muerte

open access: yesLetras, 2014
Desde 1841, el investigador privado, personaje que conecta el género policial con la actividad intelectual y crítica, se regenera en las más caleidoscópicas versiones.
Claudia Tapia Vásquez
doaj  

Modular Generation of Alkyl Selenyl Radicals for the Synthesis of Alkyl Selenides via a Mechanochemical Approach

open access: yesAdvanced Science, EarlyView.
We present a mechanochemical, radical‐mediated hydroselenation of alkenes under ambient conditions. This method modularly generates alkyl selenyl radicals from elemental selenium and alkyl (pseudo)halides, utilizing PhSiH3 and H2O as hydrogen atom donors, with the water likely originating from the air and/or trace water present in the reagents ...
Xiaochun He   +8 more
wiley   +1 more source

Highly Sensitive Heterojunction‐Gated Phototransistor With Detection Wavelength Ranged From 350 to 1700 Nm

open access: yesAdvanced Science, EarlyView.
This work demonstrates a heterojunction‐gated infrared phototransistor for broadband detection from 350 to 1700 nm. By suppressing defect states on nonpolar (100) facets of large PbS quantum dots via hybrid ligand passivation, the device achieves a room‐temperature detectivity of 5.7 × 1013 Jones at 1650 nm.
Hongkun Duan   +14 more
wiley   +1 more source

Personal Investigator: A Therapeutic 3D Game for Adolescent Psychotherapy [PDF]

open access: yes, 2005
Coyle, David   +4 more
core   +1 more source

Toward Next‐Generation High‐Speed Communication and Imaging: Solution‐Processed Sb2(S,Se)3/CdS Heterojunction for Ultrafast Self‐Powered Photodetector

open access: yesAdvanced Science, EarlyView.
A high‐quality solution‐processed Sb2(S,Se)3/CdS heterojunction is designed to overcome the intrinsic limitations of conventional photodetectors. The fabricated device achieves an excellent self‐powered performance, including a high responsivity of 0.6 A W−1, an ultrahigh specific detectivity of 7.68 × 1012 Jones, and a wide 3db bandwidth of 175 kHz ...
Xuhua Xiao   +6 more
wiley   +1 more source

Intrinsic Negative Magnetoresistance and Broadband Photoresponse in Magnetic van der Waals Crystal TaFeTe2

open access: yesAdvanced Science, EarlyView.
2D van der Waals (vdW) materials MM′Te2 with broken symmetry attract great interest for unique magnetic structures and optical‐phonon‐induced phase transitions. We report mechanically exfoliable TaFeTe2 single crystals, exhibiting spin‐glass behavior, intrinsic unsaturated negative magnetoresistance up to 9 T, self‐powered internal photocurrent, and ...
Changcun Li   +7 more
wiley   +1 more source

Modulating Persistent Photoconductivity through Barrier Engineering for High‐performance and Multifunctional Two‐dimensional Optoelectronic Devices

open access: yesAdvanced Science, EarlyView.
Schottky barrier engineering using van der Waals contacts enables effective modulation of persistent photoconductivity (PPC) in optoelectronic devices. A high persistent photoconductivity gain (PPCG) (307.6%) is achieved in a high‐barrier Au/MoS2 junction, supporting photomemory and optoelectronic synaptic behaviors. A low PPCG (4.72%) is achieved in a
Panpan Huo   +8 more
wiley   +1 more source

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