Results 251 to 260 of about 10,222,482 (327)

Modeling and simulation of ZnO-based TFTs by dielectric engineering and temperature analysis for enhanced performance. [PDF]

Sci Rep
Kumar P, Askari SSA, Das MK.
europepmc   +1 more source

Development and dosimetric evaluation of a freely deformable ⁶Li-based neutron shield for boron neutron capture therapy. [PDF]

Med Phys
Hu N, Kakino R, Sasaki A, Nojiri M, Akita K, Yoshikawa S, Kohigashi Y, Yoshino Y, Takeno S, Aihara T, Takata T, Tanaka H, Nihei K, Ono K.   +13 more
europepmc   +1 more source

The Virtual Transcatheter Aortic Valve Replacement (VTAVR) framework predicts optimal device landing zones tailored to patient-specific anatomy. [PDF]

NPJ Biomed Innov
Abdelkhalek M, Keshavarz-Motamed Z.
europepmc   +1 more source

Optimization of CsSnI₃‑, MASnI₃‑, and MAGeI₃‑Based All-Perovskite Solar Cells for Cost-Effective and Nontoxic Energy Conversion. [PDF]

ACS Omega
Uddin R, Bhowmik S.
europepmc   +1 more source

Human Factors in Airway Management: Designing Systems for Safer, Team-Based Care. [PDF]

J Clin Med
Gómez-Ríos MÁ, Michalek P, Gaszyński T, Van Zundert AAJ.   +3 more
europepmc   +1 more source

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TCAD Device Simulation With Graph Neural Network

IEEE Electron Device Letters, 2023
There is an increasing number of studies to accelerate the TCAD simulation with deep learning models. Such studies rely on performing a procedure that interpolates an unstructured mesh into a structured mesh.
Wonik Jang, Sanghoon Myung, Jae Myung Choe, Young-gu Kim, Daesin Kim   +4 more
semanticscholar   +1 more source

Acceleration of Semiconductor Device Simulation With Approximate Solutions Predicted by Trained Neural Networks

IEEE Transactions on Electron Devices, 2021
In order to accelerate the semiconductor device simulation, we propose to use a neural network to learn an approximate solution for desired bias conditions.
Seung-Cheol Han, J. Choi, Sung-Min Hong
semanticscholar   +1 more source

Machine Learning Aided Device Simulation of Work Function Fluctuation for Multichannel Gate-All-Around Silicon Nanosheet MOSFETs

IEEE Transactions on Electron Devices, 2021
A machine learning (ML) aided device simulation of work function fluctuation (WKF) for 3-D multichannel gate-all-around silicon nanosheet MOSFET is presented.
Chandni Akbar, Yiming Li, W. Sung
semanticscholar   +1 more source

Acceleration of Three-Dimensional Device Simulation with the 3D Convolutional Neural Network

International Conference on Simulation of Semiconductor Processes and Devices, 2021
We propose to use a 3D convolutional neural network to accelerate three-dimensional device simulation by generating an electrostatic potential profile. In the training phase, the deep neural network is trained with the simulation results for various 3D ...
Seung-Cheol Han, J. Choi, Sung-Min Hong
semanticscholar   +1 more source