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Investigating the performance of formamidinium tin-based perovskite solar cell by SCAPS device simulation

, 2020
Tin-based perovskite is a famous competitor to toxic lead-based perovskite solar cells. Although lead-free perovskite (CH3NH3SnI3) material attracts the attention because of its wider absorption, it suffers from temperature instability. Formamidinium tin
S. Abdelaziz   +3 more
semanticscholar   +1 more source

Semiconductor device simulation

IEEE Transactions on Electron Devices, 1983
The most effective way to design VLSI device structures is to use sophisticated, complex two-dimensional (2D) and three-dimensional (3D) models. This paper and its companion [1] discusses the numerical simulation of such device models. Here we describe the basic semiconductor equations including several choices of variables.
Fichtner, Wolfgang   +2 more
openaire   +1 more source

Semiconductor Device Simulation

IEEE Transactions on Microwave Theory and Techniques, 1974
Two of the numerical methods most widely used in solving the set of partial differential transport equations for holes, electrons, and electric field in semiconductor devices and the various numerical instability phenomena which can be encountered are described in detail.
C.M. Lee, R.J. Lomax, G.I. Haddad
openaire   +1 more source

Device simulation of 17.3% efficient lead-free all-perovskite tandem solar cell

, 2020
Present research paper brings forth the results of simulation-based studies carried out on all-perovskite tandem (both top and bottom subcells made up of perovskites) multijunction devices.
J. Madan   +3 more
semanticscholar   +1 more source

Design of hole-transport-material free CH3NH3PbI3/CsSnI3 all-perovskite heterojunction efficient solar cells by device simulation

, 2020
The hole-transport-material (HTM) free perovskite solar cells (PSCs) have drawn great attentions due to the simple structure, low fabrication cost and long term stability.
Qian-qian Duan   +8 more
semanticscholar   +1 more source

Integrating First-Principles-Based Non-Fourier Thermal Analysis Into Nanoscale Device Simulation

IEEE Transactions on Electron Devices
Thermal analysis is an essential component of semiconductor device simulation for device design and thermal management. The prevalent approach of device thermal analysis uses Fourier-law-based heat diffusion equation (HDE).
Yufei Sheng   +5 more
semanticscholar   +1 more source

Performance Comparison of ${n}$ –Type Si Nanowires, Nanosheets, and FinFETs by MC Device Simulation

IEEE Electron Device Letters, 2018
The performance of n-type silicon nanosheets, nanowires, and FinFETs is benchmarked by Monte Carlo (MC) device simulation. Measurements of nanowire transfer characteristics are provided to validate the MC model supplemented by a corresponding comparison ...
F. M. Bufler   +5 more
semanticscholar   +1 more source

Simulation and optimization studies on CsPbI3 based inorganic perovskite solar cells

Solar Energy, 2021
Cesium lead iodide (CsPbI3) based perovskite solar cell (PSC) with inorganic electron and hole transport layers is simulated using SCAPS 1D to find optimum performance conditions for an all-inorganic PSC with maximum stability and efficiency.
D. Jayan K., V. Sebastian, J. Kurian
semanticscholar   +1 more source

Numerical simulation studies of a fully inorganic Cs2AgBiBr6 perovskite solar device

, 2020
With perovskite solar cell (PSC) technology on the brink of commercialization, the use of lead and degradable components remain a concern. We have carried out simulation studies to explore a non-toxic and inorganic device utilizing Cs2AgBiBr6 as the ...
T. Islam   +9 more
semanticscholar   +1 more source

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