Results 271 to 280 of about 10,222,482 (327)

MOSFET simulation using device Simulators

1998
Semiconductor device simulation is a useful tool for predicting the behavior of semiconductor devices prior to their actual fabrication and thus can be used to reduce greatly the cost and time of device development cycle. Two approaches to device simulation have been used frequently.
J. J. Liou, A. Ortiz-Conde, F. Garcia-Sanchez   +2 more
openaire   +1 more source

Sonobuoy simulator device

The Journal of the Acoustical Society of America, 1981
The invention relates to a simulator for providing waveforms of the type produced at a receiver from a sonobuoy transmission. The simulator signal includes a component representing reverberation under different sea state conditions and a component representing echo pulses received from a target having relative motion with respect to the sonobuoy ...
openaire   +1 more source

Semiconductor Device Simulation

1995
One of the available methodologies to simulate substrate coupling is a semiconductor device simulator such as TMA MEDICI [3.2] or MEDUSA [3.4] which employs numerical techniques to analyze semiconductor device action. In this chapter we discuss an overview of such an approach, its significance and its attributes [3.1].
Nishath K. Verghese, Timothy J. Schmerbeck, David J. Allstot   +2 more
openaire   +1 more source

Semiconductor Device Simulation at NTT

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1985
The current status of semiconductor device simulation at NTT is described. Device simulators at NTT are classified into two categories. One is the conventional macroscopic approach and the other is microscopic particle analysis using a Monte Carlo method. In this paper, these simulators are introduced together with the more interesting results. Through
K. Yokoyama, M. Tomizawa, A. Yoshii, T. Sudo   +3 more
openaire   +1 more source

Modeling of highly efficient and low cost CH3NH3Pb(I1-xClx)3 based perovskite solar cell by numerical simulation

, 2020
A planar device structure Glass/FTO/TiO2/CH3NH3Pb(I1-xClx)3/Cu2O/Carbon with Chloride (Cl) doped CH3NH3PbI3 i.e. CH3NH3Pb(I1-xClx)3 as a light harvester (attributed to its enhanced thermal stability and film quality) was modeled and investigated using ...
Shambhavi Rai, B. Pandey, D. Dwivedi
semanticscholar   +1 more source

Semiconductor device simulation

Computer Physics Communications, 1991
Abstract A short account of certain interesting problems in semiconductor physics, process, and device modelling is given. This is a branch of microelectronics which requires the most advanced computational physics and the largest supercomputers for its understanding.
openaire   +2 more sources

Integrating Simulation Devices and Systems

2009
Simulators are typically standalone devices. The HSVO project is developing a network enabled platform control middleware and a number of integrated ‘edge device’ services to, among other outcomes, enable multi device and platform simulation support.
Rachel H, Ellaway, David, Topps, Kevin, Lachapelle, Jeremy, Cooperstock   +3 more
openaire   +2 more sources

Device Simulation Demands of Upcoming Microelectronics Devices

Frontiers in Electronics, 2006
An overview of models for the simulation of current transport in micro- and nanoelectronic devices within the framework of TCAD applications is presented. Starting from macroscopic transport models, currently discussed enhancements are specifically addressed.
Hans Kosina, Siegfried Selberherr
openaire   +1 more source

Numerical Device Simulations

2009
This chapter contains sections titled: General Considerations Numerical Solution of the Shockley Equations This chapter contains sections titled: Problems ...
openaire   +1 more source

Single-electron device simulation

IEEE Transactions on Electron Devices, 2000
A three-dimensional (3-D) simulator is presented which uses a linear-response approach to simulate the conductance of semiconductor single-electron transistors at the solid-state level. The many-particle groundstate of the quantum dot, weakly connected to the drain and the source reservoir, is evaluated in a self-consistent manner including quantum ...
A. Scholze, A. Schenk, W. Fichtner
openaire   +1 more source