Results 171 to 180 of about 56,896 (279)

The Influence of Residual Ion Drift During Programming of Chip‐Integrated Nanoscale HfO2‐Based Memristive Devices

open access: yesAdvanced Electronic Materials, EarlyView.
1T1R‐arrays combining filamentary‐type memristors and CMOS transistors offer great potential for energy‐efficient analog hardware accelerators. Here, transient SET analysis of nanoscale HfO2 memristors integrated on 180 nm CMOS wafers is discussed.
Oliver Artner   +11 more
wiley   +1 more source

Low‐Field Giant Dielectric Tunability by Polaron‐Mediated Interfacial Polarization in Pulsed‐Laser‐Deposited‐Nanocrystalline/Amorphous Composite BaTiO3 Thin Films

open access: yesAdvanced Electronic Materials, EarlyView.
Comparison of tunability efficiency between vacuum‐deposited PLD‐BTO films grown at Td = 550°C in the present study and representative previous reports. ABSTRACT Electrically tunable dielectric thin films are essential components for next‐generation low‐voltage electronic devices.
Shinya Kondo   +7 more
wiley   +1 more source

Reconfigurable Ternary Logic‐In‐Memory With Organic Antiambipolar Transistor

open access: yesAdvanced Electronic Materials, EarlyView.
We develop a ternary logic‐in‐memory with an organic antiambipolar transistor combining a ternary inverter and ternary nonvolatile memory in the same circuit. The memory function of the circuit enables electrical reconfiguration to obtain standard, negative, and positive ternary inverters in the same device.
Ryoma Hayakawa   +4 more
wiley   +1 more source

"It seems like a never-ending job": voices of female caregivers of older adults in the rural communities. [PDF]

open access: yesFront Public Health
Lalani N   +6 more
europepmc   +1 more source

Interfacial Redox Engineering Driven Forming‐Free Intrinsic Bipolar Switching in SiOx Memristors

open access: yesAdvanced Electronic Materials, EarlyView.
Redox engineering at the Sc/SiOx interface spontaneously establishes a stable oxygen‐vacancy‐rich region that preconditions the defect landscape in SiOx memristors. This facilitates controlled vacancy percolation, eliminates electroforming, and enables forming‐free bipolar resistive switching with improved switching uniformity, long endurance, and ...
Biswajit Jana   +3 more
wiley   +1 more source

Highly Stabilized Ni‐Rich Cathodes Enabled by Artificially Reversing Naturally‐Formed Interface

open access: yesAdvanced Energy Materials, Volume 15, Issue 11, March 18, 2025.
The application of Ni‐rich cathode materials is obstructed by interfacial and structural instability. This work proposes a facile and cost‐effective Al‐based vapor‐phase surface reaction strategy on Ni‐rich cathode to maintain its structural integrity from near‐surface to bulk.
Jinjin Ma   +11 more
wiley   +1 more source

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