Results 171 to 180 of about 56,896 (279)
1T1R‐arrays combining filamentary‐type memristors and CMOS transistors offer great potential for energy‐efficient analog hardware accelerators. Here, transient SET analysis of nanoscale HfO2 memristors integrated on 180 nm CMOS wafers is discussed.
Oliver Artner +11 more
wiley +1 more source
Behavioral science of voting in hypothetical utopia and dystopia scenarios: a predictive modeling approach. [PDF]
Kauttonen J, Suomala J.
europepmc +1 more source
Comparison of tunability efficiency between vacuum‐deposited PLD‐BTO films grown at Td = 550°C in the present study and representative previous reports. ABSTRACT Electrically tunable dielectric thin films are essential components for next‐generation low‐voltage electronic devices.
Shinya Kondo +7 more
wiley +1 more source
Reconfigurable Ternary Logic‐In‐Memory With Organic Antiambipolar Transistor
We develop a ternary logic‐in‐memory with an organic antiambipolar transistor combining a ternary inverter and ternary nonvolatile memory in the same circuit. The memory function of the circuit enables electrical reconfiguration to obtain standard, negative, and positive ternary inverters in the same device.
Ryoma Hayakawa +4 more
wiley +1 more source
"It seems like a never-ending job": voices of female caregivers of older adults in the rural communities. [PDF]
Lalani N +6 more
europepmc +1 more source
Interfacial Redox Engineering Driven Forming‐Free Intrinsic Bipolar Switching in SiOx Memristors
Redox engineering at the Sc/SiOx interface spontaneously establishes a stable oxygen‐vacancy‐rich region that preconditions the defect landscape in SiOx memristors. This facilitates controlled vacancy percolation, eliminates electroforming, and enables forming‐free bipolar resistive switching with improved switching uniformity, long endurance, and ...
Biswajit Jana +3 more
wiley +1 more source
Cultural sensitivity and patient-centered care regarding incense and candle smoke emissions. [PDF]
Lam G, Nejat C, Lee-Wong MF.
europepmc +1 more source
Highly Stabilized Ni‐Rich Cathodes Enabled by Artificially Reversing Naturally‐Formed Interface
The application of Ni‐rich cathode materials is obstructed by interfacial and structural instability. This work proposes a facile and cost‐effective Al‐based vapor‐phase surface reaction strategy on Ni‐rich cathode to maintain its structural integrity from near‐surface to bulk.
Jinjin Ma +11 more
wiley +1 more source

