Results 311 to 320 of about 764,877 (372)

Synergistic Compatibilization of CsPbBr3 Perovskites and HfO2 Nanocrystals for Hybrid Sensitized Nanoscintillators

open access: yesAdvanced Functional Materials, EarlyView.
Lead halide perovskite nanocrystals are promising scintillators but suffer from reabsorption losses and limited compatibility with high‐Z additives. Hybridization of CsPbBr3 nanocrystals with PbBr2‐passivated HfO2 nanoparticle sensitizers, achieved during or after synthesis, produces stable composites with maintained optical quality, improved ...
Francesco Bruni   +17 more
wiley   +1 more source

Exciton Binding Energy Modulation in 2D Perovskites: A Phenomenological Keldysh Framework

open access: yesAdvanced Functional Materials, EarlyView.
The intrinsic screening effects are successfully decoupled from structural distortion by rigorously designing a series of 2D perovskites. This enabled us to demonstrate how the dielectric environment modulates the quasiparticle bandgap and exciton binding energy.
Kitae Kim   +15 more
wiley   +1 more source

Melt Grafting of Geometry‐Tailored Voltage Stabilizers for High‐Performance Polypropylene Insulation

open access: yesAdvanced Functional Materials, EarlyView.
A scalable one‐step melt grafting strategy is developed to enhance the dielectric properties of isotactic polypropylene by covalently incorporating thermally stable aromatic voltage stabilizers. This solvent‐free approach improves volume resistivity and DC breakdown strength through deep trap formation and charge localization, offering a sustainable ...
Nazirul Mubin bin Normansah   +9 more
wiley   +1 more source

Selective Charge Injection via Topological van der Waals Contacts for Barrier‐Free p‐Type TMD Transistors

open access: yesAdvanced Functional Materials, EarlyView.
 Topological van der Waals contacts represent a new class of electrodes for 2D semiconductors, enabling precise control of the Schottky barrier height (SBH) and contact resistance (RC) through interlayer distance and orbital hybridization engineering. In Se‐based transition metal dichalcogenides, these contacts achieve an ultralow SBH of 7 meV, RC of 0.
Soheil Ghods   +15 more
wiley   +1 more source

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