Results 31 to 40 of about 12,597 (223)

Nondestructive Testing of Welded Composite Metal Foams

open access: yesAdvanced Engineering Materials, EarlyView.
X‐ray computed tomography (CT) is used to evaluate welded steel–steel composite metal foam (CMF) joints of two density classes. It reports variation in postweld spatial void distribution and correlates it to weld‐induced changes, mechanical performance, and failure within welded CMF panels.
Chinmaya Prerana Inguva   +2 more
wiley   +1 more source

FLAG Review 2019

open access: yesEuropean Physical Journal C: Particles and Fields, 2020
We review lattice results related to pion, kaon, D-meson, B-meson, and nucleon physics with the aim of making them easily accessible to the nuclear and particle physics communities.
S. Aoki   +34 more
doaj   +1 more source

Encyclopedia of 2D β′‐In2Se3 Growth Using Chemical Vapor Deposition: The Effects of Synthesis Parameters Onto Material Quality

open access: yesAdvanced Engineering Materials, EarlyView.
A distinct semi‐confined inner‐tube chemical vapor deposition geometry enables reproducible, large‐area growth of phase‐pure 2D β′‐In2Se3 from InI + Se precursors. Engineering local vapor transport and optimizing precursor delivery and temperature–time conditions yield uniform continuous films.
Dasun P. W. Guruge   +8 more
wiley   +1 more source

Slight Truncation Changes in Iron Oxide Nanocubes Strongly Affect Their Magnetic Properties

open access: yesAdvanced Functional Materials, EarlyView.
Subtle variations in nanoparticle morphology can lead to significant changes in functional properties. An automated shape‐fitting method captures minor differences in corner truncation between iron oxide nanocubes of similar sizes synthesized under identical conditions, revealing pronounced disparities in their magnetic and hyperthermia behavior ...
Kingsley Poon   +7 more
wiley   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Deteksi Perakaran Kelapa Sawit Pada Lubang Biopori Modifikasi Dengan Metode Geolistrik Resistivitas

open access: yesZiraa'ah: Majalah Ilmiah Pertanian, 2015
Palm has a fibrous root system, consisting of a primary root, secondary, tertiary and quaternary. In general, palm root system is closer to ground level, however, in certain cases it may penetrate deeper.
Yudhi Ahmad Nazari   +3 more
doaj   +1 more source

Enhanced Terahertz Thermoelectricity Via Engineered Van Hove Singularities and Nernst Effect in Moiré Superlattices

open access: yesAdvanced Functional Materials, EarlyView.
Moiré band engineering in graphene/hexagonal boron nitride–based superlattices unlocks van Hove singularities (VHSs) for terahertz (THz) optoelectronics. Tuning the Fermi level near these singularities, associated with secondary neutrality points (SNPs), enhances the photothermoelectric response.
Leonid Elesin   +16 more
wiley   +1 more source

Effect of non-uniform swelling on coal multiphysics during gas injection: The triangle approach

open access: yesJournal of Rock Mechanics and Geotechnical Engineering
In current dual porosity/permeability models, there exists a fundamental assumption that the adsorption-induced swelling is distributed uniformly within the representative elementary volume (REV), irrespective of its internal structures and transient ...
Yifan Huang   +4 more
doaj   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

open access: yesAdvanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu   +17 more
wiley   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand   +13 more
wiley   +1 more source

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