Results 151 to 160 of about 135,051 (299)
Thermal Side-Channel Threats in Densely Integrated Microarchitectures: A Comprehensive Review for Cyber-Physical System Security. [PDF]
Benelhaouare AZ +4 more
europepmc +1 more source
Rational Device Design and Doping‐Controlled Performance in Fast‐Response π‐Ion Gel Transistors
π‐Ion gel transistors (PIGTs) achieve extraordinary transconductance and stability through device configuration optimization, high‐mobility conjugated polymer selection, and hole scavenger doping. The optimized PIGTs maintain performance on flexible substrates, enabling printed, fast‐response, and wearable electronics.
Masato Kato +10 more
wiley +1 more source
Wafer-scale fabrication of memristive passive crossbar circuits for brain-scale neuromorphic computing. [PDF]
Choi S +4 more
europepmc +1 more source
Ferroelectricity in thin HfO2‐based films offers great possibilities for next‐generation neuromorphic memory devices. There, the response to subcoercive voltage signals is driven by the movement of mobile interfaces and their interaction with crystal defects – a yet rather unexplored aspect, which we shed light on and gain new insights into the complex
Maximilian T. Becker +11 more
wiley +1 more source
Advances in waveguide to waveguide couplers for 3D integrated photonic packaging. [PDF]
Weninger D +4 more
europepmc +1 more source
Ce:YIG/Silicon-on-insulator waveguide optical isolator realized by adhesive bonding [PDF]
Baets, Roel +5 more
core +1 more source
An efficient NiOx HTL is successfully prepared by introducing MXene as an additive without further surface modification to fabricate high‐performance FASn0.5Pb0.5I3 perovskite solar cells. The introduction of MXene contributes to improved conductivity of NiOx, better aligned at NiOx/perovskite interfaces, and enhanced quality of perovskite films ...
Lijun Chen +12 more
wiley +1 more source
An overhead-reduced, efficient, fully analog neural-network computing hardware. [PDF]
Ye J +9 more
europepmc +1 more source
In‐situ doping during growth of SnSe and subsequent attachment of SnS produces high‐quality lateral pn‐heterojunctions between van der Waals semiconductors. Electron beam induced current measurements demonstrate electrically active pn‐junctions, paving the way for devices that harness charge separation at lateral interfaces in layered heterostructures.
Peter Sutter +4 more
wiley +1 more source

