Results 131 to 140 of about 430,501 (291)

Nanoscale Spatial Tuning of Superconductivity in Cuprate Thin Films via Direct Laser Writing

Advanced Functional Materials, EarlyView.
Maskless direct laser writing enables local control of oxygen stoichiometry in epitaxial YBCO thin films under ambient conditions. Sub‐micrometer grayscale patterns with tunable optical response and superconducting transport properties are achieved.
Irene Biancardi, Valerio Levati, Jordi Alcalà, Thomas Günkel, Nicolas Lejeune, Riccardo Girelli, Alejandro V. Silhanek, Valeria Russo, Narcís Mestres, Daniela Petti, Anna Palau, Edoardo Albisetti   +11 more
wiley   +1 more source

Strong Lead‐Free Bioinspired Piezoceramics for Durable Energy Transducers

Advanced Functional Materials, EarlyView.
We fabricated brick‐and‐mortar lead‐free piezoceramics with Bi0.5Na0.5TiO3 monocrystal platelets as bricks and amorphous silica as mortar. The alignment of the bricks and the presence of the amorphous silica led to anisotropic residual stresses. These residual stresses increase the samples toughness, strength and durability while the brick alignment ...
Ruxue Yang, Temesgen Tadeyos Zate, Peiren Wang, Soumyajit Mojumder, Elo Overgaard Mogensen, Oriol Gavalda‐Diaz, Zihe Li, Shitong Zhou, Ajeet Kumar, James Roscow, Hamideh Khanbareh, Astri Bjørnetun Haugen, Florian Bouville   +12 more
wiley   +1 more source

A Thermodynamic Model of Antiferroelectics and Its Application to Electric Field Induced Antiferroelectric‐Ferroelectric Transition in PbZrO3

Advanced Functional Materials, EarlyView.
A thermodynamic model that incorporates ferroelectric, antiferroelectric, and antiferrodistortive orders of PbZrO3${\rm PbZrO}_3$ is established and parameterized based on experimental measurements and first‐principles calculations. We derive a Clapeyron‐like equation for describing the temperature‐dependence of critical electric fields for the ...
Zhiyang Wang, Guodong Zhao, Aiden Ross, Long‐Qing Chen   +3 more
wiley   +1 more source

Functional Behaviour of Materials: Dielectric Materials

, 2010
This set of animations introduces the principles of dielectric materials and explains them through the band theory.
DoITPoMS, University of Cambridge, Zoe Barber, University of Cambridge, Anna Kalorkoti, University of Cambridge   +2 more
core  

Operando Tracking of Oxygen‐Vacancy Dynamics and Negative Capacitance in Ca‐Doped BiFeO3

Advanced Functional Materials, EarlyView.
Operando electrochemical impedance spectroscopy, combined with electrocoloration, enables a direct correlation between real‐space ionic redistribution and the corresponding frequency‐domain electrical response. In lateral Ca‐doped BiFeO3 devices, time‐resolved impedance snapshots capture the evolution from bulk‐dominated mixed conduction to an ...
Jeonghun Suh, Heung‐Sik Park, Jong‐Sook Lee, Chan‐Ho Yang   +3 more
wiley   +1 more source

The dielectric constant of UO2 below the Néel point [PDF]

, 1987
We report measurements of the frequency-dependent dielectric constant of UO2 from 4.2 K to above the phase transition at 30 K. The static dielectric constant of 23.6 at 4.2 K is comparable with accepted values at higher temperatures: it is essentially ...
Harding, JH, Saunders, GA, Hampton, N, Stoneham, AM   +3 more
core  

Simultaneous Enhancement of Performance and Stability in Dual‐Gate a‐IGZO Thin‐Film Transistors via Single‐Step Laser Annealing for Capacitor‐Less DRAM

Advanced Functional Materials, EarlyView.
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon, Junil Kim, Geuntae Park, Minseok Kim, Woohyun Hwang, Wanki Kim, Daewon Ha, Byeongmoon Lee, Jae Eun Jang, Hyuk‐Jun Kwon   +9 more
wiley   +1 more source

Ferroelectric Polarization Enabled Threshold Voltage Modulation in High Electron Mobility Transistor

Advanced Functional Materials, EarlyView.
A comprehensive model is developed to capture the coupled electrostatics of a ferroelectric capacitor and a metal‐insulator‐semiconductor high electron mobility transistor (MISHEMT) connected in ferroelectric‐metal high electron mobility transistor (FeMHEMT) configuration.
Wentian Gao, Andre Wachowiak, Thomas Mikolajick, Uwe Schroeder, Roberto Guido   +4 more
wiley   +1 more source

Atom Probe Tomography as an Emerging Tool for Understanding Defect‑Driven Mechanisms in HfO2‑Based Ferroelectrics

Advanced Functional Materials, EarlyView.
This Perspective highlights atom probe tomography as a powerful tool for understanding the atomic‐scale defect chemistry in HfO2‐based ferroelectrics. 3D mapping of dopants, point defects, and interface chemistry can provide new insight into defect‐driven mechanisms underpinning the ferroelectricity in the system and guide the design of more reliable ...
Kasper Hunnestad, Catherine Dubourdieu, Alexei Gruverman, Dennis Meier   +3 more
wiley   +1 more source

Noise‐Limited Bit Precision in Ferroelectric Synaptic Transistors for High‐Resolution Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park, Yeonseop Shin, Changhyeon Han, Sangwoo Kim, Eunchan Park, Youngchan Cho, Jaehong Min, Hyunjun Ahn, Jaekyoung Park, Cheol‐Woong Yang, Jangsaeng Kim, Daewoong Kwon, Wonjun Shin   +12 more
wiley   +1 more source