Results 161 to 170 of about 7,236 (264)
Advanced Electronic Materials, EarlyView.This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez +12 more
wiley +1 more source
Surface Modification of Poly(ethylene-alt-tetrafluoroethylene) by Atmospheric Pressure Dielectric Barrier Discharge Plasma. [PDF]
Polymers (Basel)Yan X +6 more
europepmc +1 more source
Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference
Advanced Electronic Materials, EarlyView.This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho +6 more
wiley +1 more source
Measuring space charge and electric field in axisymmetric dielectric barrier discharge using EFISH technique. [PDF]
Sci RepPark J, Cha MS.
europepmc +1 more source
Advanced Electronic Materials, EarlyView.Resistive memory devices are explored for operation at extremely low temperatures relevant to quantum computing. The study reveals how transistor behavior strongly influences memory performance under cryogenic conditions and introduces an optimized programming strategy.
Emilio Pérez‐Bosch Quesada +11 more
wiley +1 more source
Surface Hydrophilic Modification of Polypropylene by Nanosecond Pulsed Ar/O2 Dielectric Barrier Discharge. [PDF]
Materials (Basel)Zhou Y, Fang Z, Zhang Y, Li T, Liu F.
europepmc +1 more source
Silicon Nitride Resistive Memories
Advanced Electronic Materials, EarlyView.Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis +7 more
wiley +1 more source
The impact of compound addition sequence on functional, antioxidant, and thermal properties of dielectric barrier discharge plasma-produced ternary complexes. [PDF]
Food Chem XTamsen M, Soltanizadeh N, Fathi M.
europepmc +1 more source
Advanced Electronic Materials, EarlyView.Flexible transparent electronics require efficient power management without sacrificing visibility or mechanical compliance. This work presents a room‐temperature‐fabricated amorphous Ga2O3/NiO heterojunction diode on a flexible substrate that enables full‐wave rectification, UV photovoltaic energy harvesting, and self‐powered photodetection.
Sourov Hossain +7 more
wiley +1 more source