Results 201 to 210 of about 399,051 (306)

Effect of Dielectric Constant on the Zeta Potential of Spherical Electric Double Layers. [PDF]

Molecules
Qamhieh K.
europepmc   +1 more source

Thermally Engineered Sodium‐Embedded Alumina with Programmable Synaptic Plasticity for Neuromorphic Transistors

Advanced Functional Materials, EarlyView.
A fully transparent, all‐metal‐oxide neuromorphic transistor using a sodium‐embedded alumina (SEA) electrolyte is demonstrated. By precisely tuning the thermal annealing process, the chemical composition of the SEA layer is controlled, allowing for the deterministic realization of both short‐term and long‐term synaptic plasticity within the same device
Yonghyun Albert Kwon, Jaeyeon Kim, Dong Yeon Won, Saeyoun Park, Youngjae Yoo, Seongchan Kim, Dong‐Hwan Kim, Jeong Ho Cho   +7 more
wiley   +1 more source

High-performance 2D electronic devices enabled by strong and tough two-dimensional polymer with ultra-low dielectric constant. [PDF]

Nat Commun
Fang Q, Yi K, Zhai T, Luo S, Lin CY, Ai Q, Zhu Y, Zhang B, Alvarez GA, Shao Y, Zhou H, Gao G, Liu Y, Xu R, Zhang X, Wang Y, Tian X, Zhang H, Han Y, Zhu H, Zhao Y, Tian Z, Zhong Y, Liu Z, Lou J.   +24 more
europepmc   +1 more source

Temperature‐Robust Interphase Enables Carboxylate‐Ester Electrolyte for Stabilizing High‐Voltage Sodium Batteries

Advanced Functional Materials, EarlyView.
A synergistic electrolyte engineering strategy of employing ethyl acetate (EA) with vinylene carbonate (VC) as multifunctional additives is initially pioneered, making various as‐prepared high‐voltage wide‐temperature sodium batteries work well via the formation of a gradient and temperature‐robust interphase.
Huihua Li, Shuaijie Chang, Hongxu Qu, Jian Wang, Fanglin Wu, Minghua Chen, Huang Zhang   +6 more
wiley   +1 more source

Colossal Dielectric Constant of Nanocrystalline/Amorphous Homo-Composite BaTiO₃ Films Deposited via Pulsed Laser Deposition Technique. [PDF]

Nanomaterials (Basel)
Kondo S, Murakami T, Pichon L, Leblanc-Lavoie J, Teranishi T, Kishimoto A, El Khakani MA.   +6 more
europepmc   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source

Breast Cancer-Related Lymphedema Assessed via Tissue Dielectric Constant Measurements. [PDF]

Cureus
Toro C, Markarian B, Mayrovitz HN.
europepmc   +1 more source

Furan‐Substituted Phosphine‐Oxide as an Efficient Interfacial Modifier for Wide‐Bandgap Perovskite Solar Cells

Advanced Functional Materials, EarlyView.
We report phosphine‐oxide interlayers for wide‐bandgap perovskite solar cells, in which tuned P = O Lewis basicity enables selective passivation of buried NiOx/perovskite interfaces and introduces interfacial dipoles that strengthen the built‐in field.
JeeHee Hong, Juan Anthony Prayogo, Soobin Heo, Jae Sung Yun, Dong Ryeol Whang, Dong Wook Chang, Hui Joon Park   +6 more
wiley   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

Application of Solution-Processed High-Entropy Metal Oxide Dielectric Layers with High Dielectric Constant and Wide Bandgap in Thin-Film Transistors. [PDF]

Micromachines (Basel)
Liu J, Xiong X, Li H, Huang X, Wang Y, Sheng Y, Liang Z, Yao R, Ning H, Wei X.   +9 more
europepmc   +1 more source