Results 21 to 30 of about 13,935 (298)

Vogel-Fulcher analysis of relaxor dielectrics with the tetragonal tungsten bronze structure : Ba6MNb9O30 (M = Ga, Sc, In) [PDF]

, 2015
In-depth analysis of the relaxor behaviour of Ba6MNb9O30 (M= Ga, Sc, In) tetragonal tungsten bronze (TTB) ceramics was carried out. Powder x-ray diffraction and scanning electron microscopy were performed in order to confirm the formation of desired ...
Morrison, Finlay D., Rotaru, Andrei
core   +1 more source

Influence of Mechanical Alloying on Dielectric Features of Ferroelectric BaTiO3 Microcrystals

International Journal of Electrochemical Science, 2014
Dielectric features of BaTiO3 microcrystals made by mechanical alloying method in the ball mill of SPEX 8000 are studied. Temperature and hysteresis loops are investigated and Curie temperature as well as dielectric constant variation are studied.
Ali H. Reshak, Mahmoud R. Roknabadi, Masoud Mollaee, Mahdieh Zaboli, Mohammad Bedhani   +4 more
doaj   +1 more source

Hysteresis behaviour of low-voltage organic field-effect transistors employing high dielectric constant polymer gate dielectrics [PDF]

, 2010
Here, we report on the fabrication of low-voltage-operating pentacene-based organic field-effect transistors (OFETs) that utilize crosslinked cyanoethylated poly(vinyl alcohol) (CR-V) gate dielectrics.
Won Min Yun, Kipyo Hong, Chanwoo Yang, Chan Eon Park, Woon-Seop Choi, Oh-Kwan Kwon, Se Hyun Kim   +6 more
core   +3 more sources

Repolarization properties of copper-containing crystals of triglycine sulfate

Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов, 2022
The paper presents the results of the analysis of experimental dielectric hysteresis loops and field dependens of polarization switching of initial and annealed crystals of triglycine sulfate, doped copper (the concentration range (4,2–8,7) 10-3 wt ...
N.N. Bolshakova, N.Yu. Druginina, A.I. Ivanova, D.N. Pavlova, B.B. Ped`ko, E.M. Semenova   +5 more
doaj   +1 more source

180nm metal gate, high-k dielectric, implant-free III--V MOSFETs with transconductance of over 425 μS/μm [PDF]

, 2007
: Data is reported from 180 nm gate length GaAs n-MOSFETs with drive current (Ids,sat) of 386 μA/μm (Vg=Vd =1.5 V), extrinsic transconductance (gm) of 426 μS/μm, gate leakage ( jg,limit) of 44 nA/cm2, and on resistance (Ron) of 1640 Ω μm. The gm and Ron
Moran, D.A.J., Passlack, M., Li, X., Thoms, S., Thayne, I.G., Hill, R.J.W., Macintyre, D., Droopad, R., Zhou, H.   +8 more
core   +1 more source

Alternate-current Condensers and Dielectric Hysteresis [PDF]

Physical Review (Series I), 1893
n ...
Bedell, Frederick, Ballantyne, N. F., Williamson, R. B.   +2 more
openaire   +1 more source

Hysteresis properties of PIN-PMN-PT single-crystal solid solutions

Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов, 2023
The paper presents the results of a study of hysteresis properties based on analysis of dielectric hysteresis loops and temperature dependences of switchable polarization for solid solutions 24% Pb(In1/2Nb1/2)O3 – 49% Pb(Mg1/3Nb2/3)O3 – 27% PbTiO3 ...
N.N. Bolshakova, N.Yu. Druginina, A.I. Ivanova, D.A. Ivanov, E.M. Semenova   +4 more
doaj   +1 more source

Effect of Nanowire-dielectric Interface on the Hysteresis of Solution Processed Silicon Nanowire FETs [PDF]

, 2018
Silicon nanowires (Si NW) are ideal candidates for low-cost solution processed field effect transistors (FETs) due to the ability of nanowires to be dispersed in solvents, and demonstrated high charge carrier mobility.
Constantinou, M, Prabha Rajeev, K, Shkunov, M, Stolojan, V, Opoku, C   +4 more
core   +2 more sources

Understanding the Origin of the Hysteresis of High-Performance Solution Processed Polycrystalline SnO₂ Thin-Film Transistors and Applications to Circuits

Membranes, 2021
Crystalline tin oxide has been investigated for industrial applications since the 1970s. Recently, the amorphous phase of tin oxide has been used in thin film transistors (TFTs) and has demonstrated high performance.
Christophe Avis, Jin Jang
doaj   +1 more source

Thermal hysteresis in low frequency dielectric response of charge density wave systems TaS3 and K0.3MoO3 [PDF]

, 2002
Low frequency dielectric response of charge density wave systems K$_{0.3}$MoO$_3$ and o-TaS$_3$ shows hysteresis on temperature cycling. The closing of the hysteresis at low temperature coincides in both systems with the closing of the hysteresis in DC ...
Starešinić, Damir, A. Loidl, Akrap, Ana, Loidl, Alois, A. Akrap, Biljaković, Katica, Lunkenheimer, Peter, K. Biljakovic, P. Lunkenheimer, D. Staresinic   +9 more
core   +1 more source