Results 21 to 30 of about 429,377 (286)

Alternate-current Condensers and Dielectric Hysteresis [PDF]

open access: yesPhysical Review (Series I), 1893
n ...
Bedell, Frederick   +2 more
openaire   +1 more source

Influence of Mechanical Alloying on Dielectric Features of Ferroelectric BaTiO3 Microcrystals

open access: yesInternational Journal of Electrochemical Science, 2014
Dielectric features of BaTiO3 microcrystals made by mechanical alloying method in the ball mill of SPEX 8000 are studied. Temperature and hysteresis loops are investigated and Curie temperature as well as dielectric constant variation are studied.
Ali H. Reshak   +4 more
doaj   +1 more source

Dielectric behaviors and relaxor characteristics in Bi0.5Na0.5TiO3-BaTiO3 ceramics [PDF]

open access: yesJournal of Advanced Dielectrics, 2019
Microstructure and dielectric behaviors of heating/cooling and bias-field were investigated in lead-free ceramics (1−x)Bi0.5Na0.5TiO3−xBaTiO3 (BNT−xBT, x=0, 0.02, 0.04, 0.06, 0.08 and 0.10).
Pei Chen   +8 more
doaj   +1 more source

Repolarization properties of copper-containing crystals of triglycine sulfate

open access: yesФизико-химические аспекты изучения кластеров, наноструктур и наноматериалов, 2022
The paper presents the results of the analysis of experimental dielectric hysteresis loops and field dependens of polarization switching of initial and annealed crystals of triglycine sulfate, doped copper (the concentration range (4,2–8,7) 10-3 wt ...
N.N. Bolshakova   +5 more
doaj   +1 more source

Hysteresis properties of PIN-PMN-PT single-crystal solid solutions

open access: yesФизико-химические аспекты изучения кластеров, наноструктур и наноматериалов, 2023
The paper presents the results of a study of hysteresis properties based on analysis of dielectric hysteresis loops and temperature dependences of switchable polarization for solid solutions 24% Pb(In1/2Nb1/2)O3 – 49% Pb(Mg1/3Nb2/3)O3 – 27% PbTiO3 ...
N.N. Bolshakova   +4 more
doaj   +1 more source

Effect of Nanowire-dielectric Interface on the Hysteresis of Solution Processed Silicon Nanowire FETs [PDF]

open access: yes, 2017
Silicon nanowires (Si NW) are ideal candidates for low-cost solution processed field effect transistors (FETs) due to the ability of nanowires to be dispersed in solvents, and demonstrated high charge carrier mobility.
Constantinou, M   +8 more
core   +2 more sources

Understanding the Origin of the Hysteresis of High-Performance Solution Processed Polycrystalline SnO2 Thin-Film Transistors and Applications to Circuits

open access: yesMembranes, 2021
Crystalline tin oxide has been investigated for industrial applications since the 1970s. Recently, the amorphous phase of tin oxide has been used in thin film transistors (TFTs) and has demonstrated high performance.
Christophe Avis, Jin Jang
doaj   +1 more source

High-energy storage and temperature stable dielectrics properties of lead-free BiScO(3)–BaTiO(3)–x(Bi(0.5)Na(0.5))TiO(3) ceramics

open access: yesIET Nanodielectrics, 2018
Lead-free (1–x)(0.4BiScO(3)–0.6BaTiO(3))-x(Bi(0.5)Na(0.5))TiO(3) (BSBT–xBNT) ceramics were prepared by traditional ceramics preparation method. The energy storage characteristics, as well as dielectric spectrum curves of BSBT–xBNT ceramics, were ...
Hang Xie   +9 more
doaj   +1 more source

Significant enhancement of dielectric properties in polyimides with sulfonyl groups in the side chains

open access: yesIET Nanodielectrics, 2023
Polymer dielectrics with excellent thermal resistance and superior energy storage behaviour are extensively demanded with the increasing development of film capacitors applied in hostile environments. In this study, novel diamine with sulfonyl‐containing
Jinpeng Luo   +4 more
doaj   +1 more source

Structure and dielectric properties of Sm3+ modified Bi4Ti3O12-SrBi4Ti4O15 intergrowth ferroelectrics [PDF]

open access: yesProcessing and Application of Ceramics, 2020
Novel samarium modified intergrowth ferroelectric ceramics, namely Bi4Ti3O12-SrBi4Ti4O15, were synthesized by conventional solid state reaction method and sintered at 1100 °C for 5 h.
Badavath Shobhan Babu   +4 more
doaj   +1 more source

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