Results 61 to 70 of about 52,035 (264)
Counterion Dependent Side‐Chain Relaxation Stiffens a Chemically Doped Thienothiophene Copolymer
Oxidation of a thienothiophene copolymer, p(g3TT‐T2), via different doping strategies and dopant molecules resulted in materials with similar oxidation levels and a high electrical conductivity of ≈100 S cm−1. However, mechanical properties varied significantly, with sub‐glass transition temperatures and elastic moduli spanning from –44°C to –3°C and ...
Mariavittoria Craighero +12 more
wiley +1 more source
Moiré band engineering in graphene/hexagonal boron nitride–based superlattices unlocks van Hove singularities (VHSs) for terahertz (THz) optoelectronics. Tuning the Fermi level near these singularities, associated with secondary neutrality points (SNPs), enhances the photothermoelectric response.
Leonid Elesin +16 more
wiley +1 more source
Ceramic materials based on complex oxides with both the perovskite structure (Ln2/3Nb2O6) and the structure of tetragonal tungsten bronze (Ba6-xLn8+2x/3Ti18O54) have been investigated over a wide frequency and temperature ranges. The results obtained for
A.G.Belous, O.V.Ovcha, D.O.Mischuk
doaj +1 more source
Formation of titanium oxide thin films by reactive magnetron sputtering
The article presents the results of studies of the dielectric characteristics of titanium oxide films deposited by reactive magnetron sputtering of a Ti target in an Ar/O2 gas mixture.
N. Villa, D. A. Golosov, T. D. Nguyen
doaj +1 more source
Dielectric Constant and Loss [PDF]
Dielectric Behaviour and Structure Dielectric Constant and Loss, Dipole Moment and Molecular Structure. By Prof. Charles Phelps Smyth. (International Chemical Series.) Pp. x + 441. (London: McGraw-Hill Publishing Company, Ltd., 1955.) 64s. 6d.
openaire +1 more source
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner +14 more
wiley +1 more source
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu +17 more
wiley +1 more source
Improved dielectric properties achieved by blending PP and PVDF
Polymer films composed of polypropylene (PP) and poly(vinylidene fluoride) (PVDF) have been fabricated by extrusion with filming system. Owing to the low content of crystallites and the lubricant of carbon black, the commercial product PVDF 370 can be ...
Benhui Fan +5 more
doaj +1 more source
A compostable PGS soft surgical robot with interchangeable modules integrates transient Mo tactile and Si thermal sensors for dual feedback. The device preserves its function after clinical‐grade sterilization, demonstrates stable actuation and cardiac tissue grasping with real‐time in vivo pulsatile monitoring, and biodegrades post‐use with soil‐safe,
Minseong Chae +27 more
wiley +1 more source
Acceptor-Induced Bulk Dielectric Loss in Superconducting Circuits on Silicon
The performance of superconducting quantum circuits is primarily limited by dielectric loss due to interactions with two-level systems (TLSs). State-of-the-art circuits with engineered material interfaces are approaching a limit where dielectric loss ...
Zi-Huai Zhang +6 more
doaj +1 more source

