Results 121 to 130 of about 136,279 (344)

From Mechanics to Electronics: Influence of ALD Interlayers on the Multiaxial Electro‐Mechanical Behavior of Metal–Oxide Bilayers

Advanced Functional Materials, EarlyView.
Ultrathin AlOxHy interlayers between aluminum films and polymer substrates significantly improve electro‐mechanical properties of flexible thin film systems. By precisely controlling interlayer thickness using atomic layer deposition, this study identifies an optimal interlayer thickness of 5–10 nm that enhances ductility and delays cracking.
Johanna Byloff, Vivek Devulapalli, Daniele Casari, Thomas E. J. Edwards, Claus O. W. Trost, Megan J. Cordill, Shuhel Altaf Husain, Pierre‐Olivier Renault, Damien Faurie, Barbara Putz   +9 more
wiley   +1 more source

Exploration and interpretation of dielectric relaxation parameters of binary mixtures at low temperature using TDR

Chemical Thermodynamics and Thermal Analysis
Complex permittivity spectra (CPS) of Ethyl Acetate-Xylene solutions were measured using time domain dielectric spectroscopy (TDDS) technique in 10 MHz to 50 GHz frequency range at low temperature of about 10 °C.
S.S. Birajdar, A.C. Kumbharkhane, D.B. Suryawanshi   +2 more
doaj   +1 more source

Delving into the properties of nanostructured Mg ferrite and PEG composites: A comparative study on structure, electrical conductivity, and dielectric relaxation. [PDF]

Heliyon, 2023
El-Ghazzawy EH, Zakaly HMH, Alrowaily AW, Saafan SA, Ene A, Abo-Aita NM, Darwish MA, Zhou D, Atlam AS.   +8 more
europepmc   +1 more source

Imaging of Biphoton States: Fundamentals and Applications

Advanced Functional Materials, EarlyView.
Quantum states of two photons exhibit a rich polarization and spatial structure, which provides a fundamental resource of strongly correlated and entangled states. This review analyzes the physics of these intriguing properties and explores the various techniques and technologies available to measure them, including the state of the art of their ...
Alessio D'Errico, Ebrahim Karimi
wiley   +1 more source

Relaxation Time, Excess Relaxation Time and Dipole Moment of Binary Mixture of 2,3-Dichloroaniline and 2-Methoxyethanol using Frequency Domain Reflectometer

Orbital: The Electronic Journal of Chemistry, 2020
Dielectric constant (e') and dielectric loss (e") of 2,3-Dichloroaniline (2,3-DCA), 2-Methoxyethanol (2-ME) and  binary mixtures of 2,3-DCA+2-ME in 1,4-dioxane solutions have been measured at microwave frequency 10.985 GHz at different temperatures 20 0C,
Bhupesh G. Nemmaniwar
doaj  

Orientation Polarization Spectroscopy-Toward an Atomistic Understanding of Dielectric Relaxation Processes. [PDF]

Int J Mol Sci, 2022
Kremer F, Kipnusu WK, Fränzl M.
europepmc   +1 more source

Magnetism and Nonlinear Charge Transport in NiFe2O4/γ‐Al2O3/SrTiO3 Heterostructure: Toward Spintronic Applications

Advanced Functional Materials, EarlyView.
In this report, we demonstrate that a crystalline phase of 52nm thick NiFe2O4 can be grown by RF sputtering on top of γ‐Al2O3(8nm)/SrTiO3 at a significantly low temperature (150 °C) without compromising the mobility and carrier density of the 2D electron gas at the γ‐Al2O3(8nm)/SrTiO3 interface.
Amit Chanda, Thor Hvid‐Olsen, Christina Hoegfeldt, Anshu Gupta, Alessandro Palliotto, Fardin Ghaffari‐Tabrizi, Maja A. Dunstan, Kasper S. Pedersen, Dae‐Sung Park, Damon J. Carrad, Thomas Sand Jespersen, Felix Trier   +11 more
wiley   +1 more source

Reservoir computing with dielectric relaxation at an electrode-ionic liquid interface. [PDF]

Sci Rep, 2022
Koh SG, Shima H, Naitoh Y, Akinaga H, Kinoshita K.   +4 more
europepmc   +1 more source

Unusual Dielectric Relaxation in Lightly Doped n-Type Rhombohedral BaTi0.85Zr0.15O3:Ta Ferroelectric Ceramics [PDF]

, 2005
Jun Xu, Mitsuru Itoh
openalex   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source