Results 171 to 180 of about 10,584 (269)

Hf/Zr Superlattice-Based High-κ Gate Dielectrics with Dipole Layer Engineering for Advanced CMOS. [PDF]

ACS Nano
Song T, Kang S, Kuo YH, Chen J, Fernandes L, Afroze N, Tian M, Baac HW, Shin C, Khan AI.   +9 more
europepmc   +1 more source

Interface Effects in Ultrathin Silicon on Insulator Films

Advanced Functional Materials, EarlyView.
This work establishes a systematic framework to discriminate how bulk and interface phenomena affect charge transport in ultrathin P‐doped silicon‐on‐insulator (SOI) films. For Si films below 15 nm, electrical characterization demonstrates that interface states drive charge transport, shifting the metal‐insulator transition (MIT) critical dopant ...
Andrea Pulici, Gabriele Seguini, Fabiana Taglietti, Roman Gumeniuk, Riccardo Chiarcos, Michele Laus, Johannes Heitmann, Marco Fanciulli, Michele Perego   +8 more
wiley   +1 more source

Natural, small molecule aliphatics (cholesterol and hexadecyl palmitate) as dielectrics for low-voltage organic field effect transistors.

Mater Adv
Irimia CV, Schimanofsky C, Ban B, Yumusak C, Ciganek M, Sedlacek P, Krajcovic J, D'Orsi R, Operamolla A, Petritz A, Matura K, Stadlober B, Kanbur Y, Salinas Y, Brüggemann O, Teichert C, Sariciftci NS, Irimia-Vladu M.   +17 more
europepmc   +1 more source

Hydroxyquinoline-coordinated organometallic complex nanowire and nanosheet for the dielectric layer of capacitors. [PDF]

Nanoscale Adv
Khanmohammadi Chenab K, Zarifi F, Mahmoudi Qashqay S, Zamani-Meymian MR.   +3 more
europepmc   +1 more source

Mesoscale Domain Evolution Mechanism during Alternating Current (AC) Poling of Relaxor Ferroelectrics

Advanced Functional Materials, EarlyView.
Ferroelectric domain variants that are energetically equivalent are expected to remain preserved during polarization reversal. However, phase‐field simulations reveal that inclined domain walls in relaxor ferroelectrics can undergo irreversible elimination during alternating current poling through a proximity effect driven by long‐range elastic ...
Yuan‐Jie Sun, Bo Wang, Long‐Qing Chen   +2 more
wiley   +1 more source

Controllable growth of MoO₃ dielectrics with sub-1 nm equivalent oxide thickness for 2D electronics. [PDF]

Nat Commun
Li X, Xu S, Zhang Z, Yu Z, Pan Z, Yang Y, Lu X, Huo N.   +7 more
europepmc   +1 more source

Bio‐Inspired Synthesis of Macroporous Single Crystal Particles as Scattering Agents

Advanced Functional Materials, EarlyView.
A general strategy is presented that delivers unique, single‐crystal microparticles that combine submicron macroporosity and uniform particle shapes. A bioinspired approach is used to occlude three distinct types of additives – polystyrene microspheres, polymer vesicles and amino acids – within calcite single crystals, and subsequent thermal annealing ...
Stephanie E. Foster, Gianni Jacucci, Ouassef Nahi, Thomas Kress, Zabeada Aslam, Stuart Micklethwaite, Alexander N. Kulak, Rik Drummond‐Brydson, Melinda J. Duer, Yi‐Yeoun Kim, Silvia Vignolini, Fiona C. Meldrum   +11 more
wiley   +1 more source

Oriented ion migration in dielectric Sb₄O₅Cl₂ single crystals for multifunctional two-dimensional electronics. [PDF]

Nat Commun
Li Z, Gou G, Xu X, Wang H, Liu T, Luo H, Wu J, Liu K, Gao L, Zhai T, Zhou X.   +10 more
europepmc   +1 more source

Nano‐Scale Characterization of Impurities Segregation in Solid Oxide Electrolysis Cells

Advanced Functional Materials, EarlyView.
Cathodic polarization induces impurity segregation in Ni, forming an amorphous Na─Al─Si─O amorphous phase at grain boundaries. Under ultralow oxygen partial pressure, multiple elements dissolve, migrate, and reoxidize within the metal. A patterned model system provides direct nanoscale evidence, clarifying the mechanism of polarization‐driven impurity ...
Zhongtao Ma, Qingjie Wang, Bowen Li, Vasileios Bilalis, Søren Bredmose Simonsen, Ming Chen   +5 more
wiley   +1 more source

Charge Trap and Oxygen Barrier Engineering in Voltage-Stabilizing Grafted Silicone Rubber via Multiscale Molecular Simulations. [PDF]

Polymers (Basel)
Sun J, Zhao X, Li Z.
europepmc   +1 more source