Advanced Electronic Materials, EarlyView.This paper reviews the physics of liquid metals in RF devices, including the influence of mechanical strain on resonance as well as fabrication methods and strategies for designing tunable and strain‐tolerant inductors, capacitors, and antennas.
Md Saifur Rahman, William J. Scheideler
wiley +1 more source
A numerical approach to fractional Volterra-Fredholm integro-differential problems using shifted Chebyshev spectral collocation. [PDF]
Sci RepHamood MM, Sharif AA, Ghadle KP.
europepmc +1 more source
Advanced Electronic Materials, EarlyView.Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
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A novel projection data domain material decomposition method for dual-energy CT and its impact on the accuracy of attenuation values. [PDF]
Phys Med BiolHaase V +4 more
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Low‐Power Control Of Resistance Switching Transitions in First‐Order Memristors
Advanced Electronic Materials, EarlyView.Joule losses are a serious concern in modern integrated circuit design. In this regard, minimizing the energy necessary for programming memristors should be handled with care. This manuscript presents an optimal control framework, allowing to derive energy‐efficient programming voltage protocols for resistance switching devices. Following this approach,
Valeriy A. Slipko +3 more
wiley +1 more source
High-Order Aberrations in Cataract Surgery: Current Status and Future Perspectives: A Scoping Review. [PDF]
Medicina (Kaunas)Musat AAM +5 more
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The butterfly sequence: the second difference sequence of the numbers of integer partitions with distinct parts, its pentagonal number structure, its combinatorial identities and the cyclotomic polynomials 1-x and 1+x+x^2 [PDF]
, 2018 Cristiano Husu
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Uranium Doped Gallium Nitride Epitaxial Thin Films
Advanced Electronic Materials, EarlyView.Uranium was controllably added to gallium nitride using molecular beam epitaxy. The uranium atoms segregated into vertically oriented regions with higher doping levels. Concentrations up to a few percent were achieved without showing significant degradation in the crystalline quality or optical characteristics. Low electrical resistivity was maintained
J. Pierce Fix +10 more
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A note on the analysis of Herrmann-May lattices for small exponent RSA. [PDF]
Sci RepKalam A, Karmakar S, Sarkar S.
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