Results 221 to 230 of about 9,252,756 (359)

Nice lists of differences, and their connections with algebraic properties of unitary polynomials.

, 2007
Andrea Vietri
openalex   +1 more source

$ψ$-Appell polynomials` solutions of an umbral difference nonhomogeneous equation

, 2004
A. K. Kwaśniewski
openalex   +1 more source

Noetherian quotients of the algebra of partial difference polynomials\n and Grobner bases of symmetric ideals [PDF]

, 2013
Vladimir P. Gerdt, Roberto La Scala
openalex   +1 more source

Two variable Freud orthogonal polynomials and matrix Painlevé-type difference equations

, 2022
Cleonice F. Bracciali, Glalco S. Costa, Teresa E. Pérez   +2 more
openalex   +2 more sources

A DC Compact Model of an Organic Electrochemical Transistor Based on a Semiconductor Physics and Thermodynamic Approach

Advanced Electronic Materials, EarlyView.
This work presents a physics‐based DC compact model of an Organic Electrochemical Transistor (OECT) that takes into account the faradaic redox reaction in the above threshold regime and incorporates the diffusive current of the subthreshold regime based on semiconductor physics.
Ermias Telahun Teka, Yeohoon Yoon, Laura Teuerle, Tommy Meier, Hans Kleemann, Ghader Darbandy, Benjamin Iniguez   +6 more
wiley   +1 more source

Simplex polynomial in complex networks and its applications to compute the Euler characteristic. [PDF]

Front Comput Neurosci
Wang Z, Fu X, Deng B, Chen Y, Zhao H.
europepmc   +1 more source

On analytic properties of Meixner-Sobolev orthogonal polynomials of higher order difference operators [PDF]

, 2018
Roberto S. Costas-Santos, Anier Soria-Lorente, Jean-Marie Vilaire   +2 more
openalex  

Metal–Insulator–Insulator–Metal (MIIM) Ag/SnO2/Al2O3/Ag Diodes Fabricated by Ultraprecise Dispensing and Atomic Layer Deposition

Advanced Electronic Materials, EarlyView.
This study introduces a new method for fabricating MIIM diodes using ultra‐precise dispensing printing techniques combined with ALD. Thus, it provides a practical alternative to traditional lithography. The fabricated diode, with a contact area of 5.4 µm × 4.0 µm exhibits a tunneling current in the microampere range, a zero‐bias responsivity of −1.31 A/
Aboubacar Savadogo, Klaus Huska, Rohit D. Chavan, Thomas Nyachoti Nyangonda, Jan Feßler, Bernard Odhiambo Aduda, Ulrich Wilhelm Paetzold, Uli Lemmer, Mohamed Hussein   +8 more
wiley   +1 more source

Optimized Locally Exact Numerical Scheme Based on Finite Variable Difference Method and Characteristic Polynomial Analysis Method [PDF]

, 1995
Katsuhiro Sakai
openalex   +1 more source

Extreme Transverse Magnetoresistance in TiZn16

Advanced Electronic Materials, EarlyView.
Extreme magnetoresistance is observed in TiZn16, despite its metallic nature and a highly complex electronic structure with multiple electron and hole Fermi surfaces. High‐magnetic‐field measurements further revealed the presence of a cylindrical open orbit, which may help resolve the origin of the extreme magnetoresistance.
Aaron Chan, Guoxin Zheng, Dechen Zhang, Yuan Zhu, Kaila Jenkins, Kuan‐Wen Chen, Haozhe Wang, Weiwei Xie, Brianna Billingsley, Tai Kong, Na Hyun Jo, Lu Li   +11 more
wiley   +1 more source