Results 31 to 40 of about 470 (113)
Advanced Electronic Materials, EarlyView.ABSTRACT Layered 2D materials are considered as promising for memristive applications due to their ultimate vertical scalability compared to conventional semiconductor films and pronounced hysteresis properties. Bias‐resolved Raman and Photoluminescence mapping is used to quantify strain from phonon shifts and carrier density from the exciton‐trion ...
Vladislav Kurtash +4 more
wiley +1 more source
Micro and Nanosystems, 2019 : This paper brings in a new design, namely, voltage mode differentiator with an active element, Carbon Nanotube Field Effect Transistors Voltage Difference Transconductance Amplifier (CNVDTA). The circuit thus proposed needs one Carbon Nanotube Field Effect Transistors Voltage Difference Transconductance Amplifier (CNVDTA) element and a single ...
Avireni Bhargav, Jitendra Kumar Saini
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Physics‐Based Compact Modeling of Advanced 3D Nanoscale Vertical NAND Flash Memory
Advanced Electronic Materials, EarlyView.For advanced 3D NAND flash memory, a unified compact model for SPICE is proposed that spans from the intrinsic unit cell to the full string and captures the electrostatic coupling with adjacent inhibit strings. It can successfully predict read behavior, program/erase dynamics, and interactions between neighboring cells, reflecting array‐level behavior ...
Ilho Myeong, Seonho Shin, Ickhyun Song
wiley +1 more source
Advanced Electronic Materials, EarlyView.Compact circuits based on contact‐controlled transistors are well‐suited to unsupervised thermal management, sensitive temperature measurement, or temperature‐stable current references. Demonstrated on flexible microcrystalline silicon and supported by simulation, the approach does not require supply voltage regulation, remains manufacturable across ...
Eva Bestelink +6 more
wiley +1 more source
Controllable Ge Hut Wires With Mobilities Exceeding 20 000 cm2 V−1 s−1
Advanced Electronic Materials, EarlyView.The controlled growth of germanium hut wires on patterned SiGe/Si(001) substrates is reported. These self‐assembled nanowires achieve a record hole mobility of 22 900 cm2 V−1 s−1 at 4.2 K. Remarkably, conductance quantization is observed at a channel length of 1.9 µm, highlighting their exceptionally low disorder and paving the way for scalable, high ...
Ming Ming +7 more
wiley +1 more source
0.5 V BD-MIMO DDTA-Based Universal Multimode Biquad Filter
IEEE AccessA novel low-voltage universal mixed-mode filter that makes use of a multiple input/output differential difference transconductance amplifier (MIMO-DDTA) is presented in this study.
Chandra Shankar +3 more
doaj +1 more source
Advanced Electronic Materials, EarlyView.Two series of self‐doped conjugated polyelectrolytes are synthesized from a non‐self‐dopable building block 3MEEET and a self‐dopable building‐block 3HOT−[TMA+] or 3HOT−[SO3H] enabling precise control over the degree of self‐doping, which in turn directly governs the threshold voltage (VT) in OECTs over a wide range of 700 mV.
Julian Hungenberg +7 more
wiley +1 more source
Low-Power Tunable Differentiator using Voltage Difference Transconductance Amplifier
Abstract This paper demonstrates an innovative design of a voltage–mode differentiator circuit using the active element called voltage difference transconductance amplifier (VDTA). The proposed circuit utilizes one VDTA element, a single resistor, and a capacitor.
Motkuri Krishna, Bal Chand Nagar
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Advanced Intelligent Discovery, EarlyView.Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj +2 more
wiley +1 more source