Results 41 to 50 of about 35,258,878 (189)

Fully Integrated 1.8 V Output 300 mA Load LDO with Fast Transient Response

, 2023
Based on an 0.18 μm process, this paper proposes a fully integrated 1.8 V output 300 mA load low-dropout linear regulator (LDO) with a fast transient response.
Yuexin Gao, Bo Li, Ruirui Xia, Mali Gao, Xiaowu Cai   +4 more
core   +1 more source

Artificial Intelligence‐Assisted Workflow for Transmission Electron Microscopy: From Data Analysis Automation to Materials Knowledge Unveiling

Advanced Materials, Volume 38, Issue 51, 11 September 2026.
AI‐Assisted Workflow for (Scanning) Transmission Electron Microscopy: From Data Analysis Automation to Materials Knowledge Unveiling. Abstract (Scanning) transmission electron microscopy ((S)TEM) has significantly advanced materials science but faces challenges in correlating precise atomic structure information with the functional properties of ...
Marc Botifoll, Ivan Pinto‐Huguet, Enzo Rotunno, Thomas Galvani, Catalina Coll, Payam Habibzadeh Kavkani, Maria Chiara Spadaro, Yann‐Michel Niquet, Martin Børstad Eriksen, Sara Martí‐Sánchez, Georgios Katsaros, Giordano Scappucci, Peter Krogstrup, Giovanni Isella, Andreu Cabot, Gonzalo Merino, Pablo Ordejón, Stephan Roche, Vincenzo Grillo, Jordi Arbiol   +19 more
wiley   +1 more source

A Fast-Transient Digital LDO With Asynchronous Coarse and Dual-Mode Fine Regulation Loops

IEEE Open Journal of Power Electronics
This paper presents a fully-integrated all-digital low-dropout regulator (DLDO) for efficient fine-grained power delivery and management in system-on-chip (SoC) devices.
Ibrar Ali Wahla, Jongwoon Lee, Young-Ryul Yun, Muhammad Abrar Akram, In-Chul Hwang   +4 more
doaj   +1 more source

Gapless Superconductivity From Extremely Dilute Magnetic Disorder in 2H‐NbSe2‐xSx

Advanced Materials, Volume 38, Issue 51, 11 September 2026.
We demonstrate that 2H‐NbSe2‐xSx hosts gapless superconductivity at unexpectedly low magnetic impurity concentrations. Combining STM, Bogoliubovde Gennes simulations, DFT, and quasiparticle interference, we comprehensively study the development of gapless behavior and show that SeS substitution reshapes the band structure, enhances nesting, and drives ...
Jose Antonio Moreno, Mercè Roig, Víctor Barrena, Edwin Herrera, Alberto M. Ruiz, Samuel Mañas‐Valero, Antón Fente, Anita Smeets, Jazmín Aragón, Yanina Fasano, Beilun Wu, Maria N. Gastiasoro, Eugenio Coronado, José J. Baldoví, Brian M. Andersen, Isabel Guillamón, Hermann Suderow   +16 more
wiley   +1 more source

High‐Performance Piezoelectric Nanogenerators Based on Wurtzite BeO Nanowire Arrays

Advanced Materials Technologies, Volume 11, Issue 18, 18 September 2026.
This study demonstrates high‐performance piezoelectric nanogenerators based on 1D BeO nanowire arrays. The BeO nanowires exhibit a high piezoelectric coefficient (∼15.8 pm V−1) and deliver an output voltage of ∼26.1 V and power density of ∼0.32 µW cm−2.
Yoonseo Jang, Jihyeon Park, Seoyeah Oh, Jonghyun Bae, Prakash R. Sultane, Christopher W. Bielawski, Jiwon Kim, Jungwoo Oh   +7 more
wiley   +1 more source

A Small-Area 2nd-Order Adder-Less Continuous-Time ΔΣ Modulator With Pulse Shaping FIR DAC for Magnetic Sensing

IEEE Open Journal of Circuits and Systems
This work presents a small-area 2nd-order continuous-time $\Delta \Sigma $ Modulator (CT $\Delta \Sigma \text{M}$ ) with a single low dropout regulator (LDO) serving as both the power supply for the CT $\Delta \Sigma \text{M}$ and reference voltage ...
Manish Srivastava, Alessandro Ferro, Aleksandr Sidun, Jose M. De La Rosa, Kilian O'Donoghue, Padraig Cantillon-Murphy, Daniel O'Hare   +6 more
doaj   +1 more source

Graphene (0002)/Diamond (111) Heterojunction with High Piezoresistive Response

Advanced Science, Volume 13, Issue 50, 7 September 2026.
Graphene/diamond heterostructures show promise as silicon alternatives for semiconductors, but high‐quality integration is challenging. Thermal electron irradiation enables covalent bonding; lonsdaleite acts as an intermediate. The heterostructure exhibits a high piezoresistive response (gauge factor −1149) associated with electron‐rich layers and ...
Xueyu Zhang, Kun Guo, Zhigang Gai, Tianxiao Guo, Yuan Gao, Jiancai Leng, Mei Zhang, Tonggang Jiu, Yibao Wang, Shousheng Liu, Xin Jiang   +10 more
wiley   +1 more source

Wavelet‐Based Hurst Exponent Estimation

WIREs Computational Statistics, Volume 18, Issue 3, September 2026.
The review explores how wavelet‐based methods for estimating the Hurst parameters have developed from their theoretical roots to real‐world applications in fields like biology, engineering, and telecommunications. The review aims to highlight key techniques, compare their strengths and limitations, and point out challenges that still need to be ...
Dixon Vimalajeewa, Fabrizio Ruggeri, Brani Vidakovic   +2 more
wiley   +1 more source

A digital LDO with adaptive sampling frequency and asynchronous loop

Journal of Physics: Conference Series
Abstract The development of semiconductor processes has led to a decrease in the operating voltage of transistors. Digital low dropout linear regulators (DLDO) have been proposed to address this low-voltage operating environment. However, DLDOs with conventional structures need help meeting the requirements of fast response and low power
Xinyu Cai, Lan Dai
openaire   +1 more source

Boosting the Photocatalytic Performance of Layered Double Hydroxides by In Situ Reactions with Metal Nanoclusters

Aggregate, Volume 7, Issue 8, August 2026.
An interfacial engineering strategy based on in situ reactions between metal nanoclusters and layered double hydroxides enables simultaneous nanocluster size regulation, heterojunction construction, and mesopore generation. The reconstructed interface enhances visible‐light harvesting, charge separation, and mass transport, providing a general strategy
Qi Chen, Zhipu Zhang, Xinxin Pan, Manxi Zhang, Qiaofeng Yao, Wenping Hu   +5 more
wiley   +1 more source