Results 201 to 210 of about 232,821 (259)
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Nano Letters, 2007
We present a nanofluidic diode that at voltage range -5 to +5 V rectifies ion current with degrees of rectification reaching several hundreds. The diode is based on a single asymmetric nanopore whose surface was patterned so that a sharp boundary between positively and negatively charged regions is created. This boundary defines a zone that is enriched
Ivan, Vlassiouk, Zuzanna S, Siwy
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We present a nanofluidic diode that at voltage range -5 to +5 V rectifies ion current with degrees of rectification reaching several hundreds. The diode is based on a single asymmetric nanopore whose surface was patterned so that a sharp boundary between positively and negatively charged regions is created. This boundary defines a zone that is enriched
Ivan, Vlassiouk, Zuzanna S, Siwy
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Chem. Soc. Rev., 2010
Ionic rectifying effect is a unique ion transport phenomenon observed in certain types of nanofluidic devices and cannot be implemented in microfluidics. Analogous to a diode in solid-state electronics, these diode-like nanofluidic devices can be used to turn the ionic flow on and off depending on the polarity of the applied electric-field.
Li-Jing, Cheng, L Jay, Guo
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Ionic rectifying effect is a unique ion transport phenomenon observed in certain types of nanofluidic devices and cannot be implemented in microfluidics. Analogous to a diode in solid-state electronics, these diode-like nanofluidic devices can be used to turn the ionic flow on and off depending on the polarity of the applied electric-field.
Li-Jing, Cheng, L Jay, Guo
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SIAM Journal on Mathematical Analysis, 2004
The authors study the linear problem \[ f_{t}+vf_{x}+E(t,x)f_{v}=0, \tag{1} \] with a given, external electric field \(E(t,x)\). This is the evolutional model for classical electrical conduction in a plane diode. The main theorem concerns the \(C^{1}\) estimate for the solutions of (1) with sign conditions \(E(t,0)\leq{0},\;E(t,1)\geq{0}\). Then a \(BV\
Yan Guo, Chi-Wang Shu, Tie Zhou
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The authors study the linear problem \[ f_{t}+vf_{x}+E(t,x)f_{v}=0, \tag{1} \] with a given, external electric field \(E(t,x)\). This is the evolutional model for classical electrical conduction in a plane diode. The main theorem concerns the \(C^{1}\) estimate for the solutions of (1) with sign conditions \(E(t,0)\leq{0},\;E(t,1)\geq{0}\). Then a \(BV\
Yan Guo, Chi-Wang Shu, Tie Zhou
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Microwave Diodes (Varactor Diode, p-i-n Diode, IMPATT Diode, TRAPATT Diode, BARITT Diode, etc.)
2015Microwave diodes are used to provide amplification, oscillation and other functions at microwave frequencies. They have a large bandwidth, therefore more information can be transmitted in microwave frequency range. It is the current trend to use microwaves more and more in long distance communication such as telephony, TV network, space communication ...
K. M. Gupta, Nishu Gupta
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Photometry of diode emitters: light emitting diodes and infrared emitting diodes
Applied Optics, 1991New methods are described for luminous intensity and luminous flux determination for small light sources. Introduction of a special multiple point method and correction techniques for integrating spheres are shown.
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A New Majority Carrier Diode - The Camel Diode
Extended Abstracts of the 1979 International Conference on Solid State Devices and Materials, 1979A majority carrier diode is described in which current flow is controlled by a potential hump in the bulk of a semiconductor. In order to make a diode of good quality on an n-type substrate a highly doped p+ region is used to form a potential barrier between a degenerate n-type region and the substrate.
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Electronics and Power, 1976
The light emitting diode (i. e. d. ) is widely used as indicator lamp, and in displays. The output covers a narrow spectral band which is defined by the material and dopants used. At present red, orange, yellow and green emitting devices are commercially available. The l. e. d. has many of the expected attributes of semiconductor devices including long
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The light emitting diode (i. e. d. ) is widely used as indicator lamp, and in displays. The output covers a narrow spectral band which is defined by the material and dopants used. At present red, orange, yellow and green emitting devices are commercially available. The l. e. d. has many of the expected attributes of semiconductor devices including long
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2015
In the recent past, the development of microwave devices having low noise, high frequency, greater bandwidth, lesser switching time etc. has yielded devices with improved performance. These devices have been used in drying machines for textile, food and papers industries etc., for biomedical applications, for electronic warfare etc.
K. M. Gupta, Nishu Gupta
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In the recent past, the development of microwave devices having low noise, high frequency, greater bandwidth, lesser switching time etc. has yielded devices with improved performance. These devices have been used in drying machines for textile, food and papers industries etc., for biomedical applications, for electronic warfare etc.
K. M. Gupta, Nishu Gupta
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Gunn Diode and IMPATT Diode Modelling
1993Transferred-electron devices (utilizing the bulk negative resistance of gallium arsenide, indium phosphide or related compounds) and avalanche devices that use impact ionization in high electric field — are the most powerful solid-state sources of microwave energy. In this Chapter, we discuss different approaches to modeling these devices.
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