Results 161 to 170 of about 3,197,005 (354)
Advanced Electronic Materials, EarlyView.A biocompatible graphene/ZnO optical charge trap memory (CTM) is reported with over 54 h retention, enabled by interfacial photodoping. Using transient absorption spectroscopy and electrical analysis, charge transfer quenching is elucidated and reveal that a large energy barrier at the interface is responsible for long‐term memory retention.
Seungmin Shin +10 more
wiley +1 more source
Ingeniare: Revista Chilena de Ingeniería, 2008 In this paper we present a qualitative discussion of a new General Relativistic Field Theory for the electron, obtaining the Dirac equation from electromagnetic fields with the electric field parallel to the magnetic field.
Héctor Torres-Silva
doaj
Ricci Coefficients in Covariant Dirac Equation, Symmetry Aspects and Newman-Penrose Approach [PDF]
, 2011 В. М. Редьков
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Robust C–V Ratio Technique for Profiling Defects in Proton‐Irradiated 4H‐SiC
Advanced Electronic Materials, EarlyView.A noise‐robust C–V ratio technique is introduced to profile radiation‐induced defects in proton‐irradiated 4H‐SiC Schottky diodes. By using analytical capacitance ratios instead of numerical differentiation, the method directly extracts trap‐density and effective trap‐energy profiles at room temperature.
Kibeom Kim +4 more
wiley +1 more source
Atom Indonesia, 2013 The motion of a nucleon in q-deformed Eckart potential field coupled with Yukawa-type tensor potential is described by using Dirac equation. The bound state solutions of Dirac equation for q-deformed Eckart potential with Yukawa-type tensor potential ...
A. Suparmi, C. Cari
doaj
Chandrasekhar separation ansatz and the generalized total angular momentum for the Dirac equation in the Kerr-Newman metric [PDF]
, 2005 Davide Batic, Harald Schmid
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Modeling and Verification of 1/f Noise Mechanisms in FAPbBr3 Single‐Crystal X‐Ray Detectors
Advanced Electronic Materials, EarlyView.We demonstratethat surface‐trap‐induced carrier number fluctuations are the dominantmechanism in FAPbBr3 Schottky devices, a conclusion supported by thedistinct defect profiles revealed by Drive‐Level Capacitance Profiling (DLCP). Throughnoise contribution decomposition, it is found that the 1/f noise of thedetector is the key noise source affecting ...
Zhongyu Yang +6 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.Sub‐5 nm double‐gate MOSFETs based on 2D SiAs monolayers are investigated using quantum transport simulations. By engineering source‐drain underlap regions, the devices achieve exceptional on‐currents of up to 1206 µA µm−1, surpassing the ITRS 2028 high‐performance targets.
Dogukan Hazar Ozbey, Engin Durgun
wiley +1 more source
Advanced Energy Materials, EarlyView.The molecular design strategy that integrates both side chain and backbone engineering in diketopyrrolopyrrole‐based conjugated polymers to identify the optimal balance between doping efficiency and microstructural order is demonstrated. Comprehensive spectroscopic, electrochemical, morphological, and structural characterizations reveal that the ...
Taewoong Han +13 more
wiley +1 more source
Atroposelective Suzuki–Miyaura Coupling to Form 2‐Amino‐2′‐Hydroxybiphenyls Enabled by sRuPhos
Angewandte Chemie, EarlyView.We report a new chiral phosphine ligand, sRuPhos, which permits the highly enantioselective Suzuki–Miyaura coupling of ortho‐aniline and ortho‐phenol building blocks. This results in 2‐amino‐2′‐hydroxybiphenyls with very high enantiomeric excesses, products that will have application in pharmaceutical synthesis and ligand design for catalysis ...
Hamzah Sharif +3 more
wiley +2 more sources