Results 211 to 220 of about 3,197,005 (354)

Strong interfacial charge transfer from CrSBr induces extreme hole doping and quantum‐Hall states in graphene heterostructures

open access: yesInfoScience, EarlyView.
Magnetic van der Waals semiconductors offer unique opportunities to integrate spin and charge degrees of freedom in atomically thin devices. We fabricate dual‐gated heterostructures consisting of exfoliated CrSBr and monolayer graphene with Hall measurement revealing robust heavy p‐doping of graphene and signals of h‐BN/graphene moiré superlattices ...
Ziqi Liu   +8 more
wiley   +1 more source

Temperature‐robust exchange bias and spin‐orbit torque switching in van der Waals heterostructure

open access: yesInfoMat, EarlyView.
Exchange bias (EB) in ferromagnetic/antiferromagnetic materials enables high‐density spintronic devices. A Fe3GaTe2/NiPS3 heterostructure exhibits EB up to 150 K, with spin orbit torque switching observed in both stacking orders. Interface layer effects induce net magnetism and magnetization flipping via Fe3GaTe2 domains, with strong interlayer ...
Obaid Iqbal   +10 more
wiley   +1 more source

Computational design of two‐dimensional MA2Z4 family field‐effect transistor for future Ångström‐scale CMOS technology nodes

open access: yesInfoMat, EarlyView.
Two‐dimensional MA2Z4 such as MoSi2N4 offer a new path to extend transistor scaling beyond the limits of silicon. Due to their exceptional properties, these 2D semiconductors are promising candidates for future Ångström‐scale CMOS technology. This review outlines the computational design and roadmap bridging materials discovery, device design and ...
Che Chen Tho   +11 more
wiley   +1 more source

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