Results 251 to 260 of about 3,197,005 (354)
Research on Stress Variations During the 4H-SiC Indentation Process. [PDF]
Micromachines (Basel)Wang W, Lin S, Yu Y, Duan N.
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Duality for Evolutionary Equations With Applications to Null Controllability
Mathematical Methods in the Applied Sciences, EarlyView.ABSTRACT We study evolutionary equations in exponentially weighted L2$$ {\mathrm{L}}^2 $$‐spaces as introduced by Picard in 2009. First, for a given evolutionary equation, we explicitly describe the ν$$ \nu $$‐adjoint system, which turns out to describe a system backwards in time. We prove well‐posedness for the ν$$ \nu $$‐adjoint system. We then apply
Andreas Buchinger, Christian Seifert
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On the Mean‐Field Limit of Consensus‐Based Methods
Mathematical Methods in the Applied Sciences, EarlyView.ABSTRACT Consensus‐based optimization (CBO) employs a swarm of particles evolving as a system of stochastic differential equations (SDEs). Recently, it has been adapted to yield a derivative free sampling method referred to as consensus‐based sampling (CBS). In this paper, we investigate the “mean‐field limit” of a class of consensus methods, including
Marvin Koß, Simon Weissmann, Jakob Zech
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Khovanov Laplacian and Khovanov Dirac for knots and links. [PDF]
J Phys ComplexJones B, Wei GW.
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Interaction of Dirac δ$$ \delta $$‐Waves in the Inviscid Levine and Sleeman Chemotaxis Model
Mathematical Methods in the Applied Sciences, EarlyView.ABSTRACT This article investigates interactions of δ$$ \delta $$‐shock waves in the inviscid Levine and Sleeman chemotaxis model ut−λ(uv)x=0$$ {u}_t-\lambda {(uv)}_x=0 $$, vt−ux=0$$ {v}_t-{u}_x=0 $$. The analysis employs a distributional product and a solution concept that extends the classical solution concept.
Adelino Paiva
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X2C Hamiltonian Models in ReSpect: Bridging Accuracy and Efficiency. [PDF]
J Phys Chem ARepisky M +11 more
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Existence Analysis of a Three‐Species Memristor Drift‐Diffusion System Coupled to Electric Networks
Mathematical Methods in the Applied Sciences, EarlyView.ABSTRACT The existence of global weak solutions to a partial‐differential‐algebraic system is proved. The system consists of the drift‐diffusion equations for the electron, hole, and oxide vacancy densities in a memristor device, the Poisson equation for the electric potential, and the differential‐algebraic equations for an electric network.
Ansgar Jüngel, Tuấn Tùng Nguyến
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