Results 181 to 190 of about 1,301,436 (336)

Non‐Uniform Space‐Time‐Coding Modulation for Low‐Complexity Diagnostics of Reconfigurable Intelligent Surfaces

Advanced Electronic Materials, EarlyView.
A diagnostic method for reconfigurable intelligent surfaces (RIS) based on non‐uniform space‐time‐coding modulation is presented. Fault localization is achieved via amplitude‐only spectral measurements, eliminating the need for complex signal processing. A one‐to‐one mapping between harmonic components and RIS elements enables accurate detection.
Xiao Qing Chen, Lei Zhang, Yi Ning Zheng, Bing Bing Zhu, Marco Rossi, Giuseppe Castaldi, Shuo Liu, Vincenzo Galdi, Tie Jun Cui   +8 more
wiley   +1 more source

Robust C–V Ratio Technique for Profiling Defects in Proton‐Irradiated 4H‐SiC

Advanced Electronic Materials, EarlyView.
A noise‐robust C–V ratio technique is introduced to profile radiation‐induced defects in proton‐irradiated 4H‐SiC Schottky diodes. By using analytical capacitance ratios instead of numerical differentiation, the method directly extracts trap‐density and effective trap‐energy profiles at room temperature.
Kibeom Kim, Sung Yun Woo, Jeong Hyun Moon, Young Jun Yoon, Jae Hwa Seo   +4 more
wiley   +1 more source

Modeling and Verification of 1/f Noise Mechanisms in FAPbBr3 Single‐Crystal X‐Ray Detectors

Advanced Electronic Materials, EarlyView.
We demonstratethat surface‐trap‐induced carrier number fluctuations are the dominantmechanism in FAPbBr3 Schottky devices, a conclusion supported by thedistinct defect profiles revealed by Drive‐Level Capacitance Profiling (DLCP). Throughnoise contribution decomposition, it is found that the 1/f noise of thedetector is the key noise source affecting ...
Zhongyu Yang, Qingli Zhang, Yuting Liu, Binbin Liu, Zhiping Zheng, Guangda Niu, Ling Xu   +6 more
wiley   +1 more source

High‐Performance and Energy‐Efficient Sub‐5 nm 2D Double‐Gate MOSFETs Based on Silicon Arsenide Monolayers

Advanced Electronic Materials, EarlyView.
Sub‐5 nm double‐gate MOSFETs based on 2D SiAs monolayers are investigated using quantum transport simulations. By engineering source‐drain underlap regions, the devices achieve exceptional on‐currents of up to 1206 µA µm−1, surpassing the ITRS 2028 high‐performance targets.
Dogukan Hazar Ozbey, Engin Durgun
wiley   +1 more source

Bandgap Engineering of Nitrogen‐Doped Monolayer WSe2 Superlattice and its Application to Field Effect Transistor

Advanced Electronic Materials, EarlyView.
Random nitrogen substitution breaks translational symmetry in WSe2, creating localized impurity states near the band gap. In contrast, periodic nitrogen doping forms a superlattice, a man‐made crystal, that restores translational symmetry, broadening impurity states into dispersive sub‐bands that merge with the valence band. This enables controlled and
Yi‐Cheng Lo, Liao‐Jia Wang, Yu‐Chang Chen   +2 more
wiley   +1 more source

Cadmium and Zinc‐Doped p‐type Sb2Se3 Single Crystals and Solar Cells

Advanced Energy and Sustainability Research, EarlyView.
Cd and Zn were assessed as candidate p‐type dopants in Sb2Se3 single crystals in concentrations between 1016‐1020 cm−3. Both are effective in inducing p‐type conductivity, however Cd doped crystals exhibit lower resistivity across a wider range of dopant levels.
Thomas P. Shalvey, Theodore D. C. Hobson, Frank Herklotz, Reelika Kaupmees, Aeshah A. Almushawwah, Bradley G. Lewis, Christopher H. Don, Sean R. Kavanagh, David O. Scanlon, Vin Dhanak, Maarja Grossberg‐Kuusk, Eduard Lavrov, Ken Durose, Jonathan D. Major   +13 more
wiley   +1 more source

Flexible Memory: Progress, Challenges, and Opportunities

Advanced Intelligent Discovery, EarlyView.
Flexible memory technology is crucial for flexible electronics integration. This review covers its historical evolution, evaluates rigid systems, proposes a flexible memory framework based on multiple mechanisms, stresses material design's role, presents a coupling model for performance optimization, and points out future directions.
Ruizhi Yuan, Sen Chen, Minghui Guo, Ziliang Cui, Yujie Du, Jing Liu   +5 more
wiley   +1 more source

Interpretability and Representability of Commutative Algebra, Algebraic Topology, and Topological Spectral Theory for Real‐World Data

Advanced Intelligent Discovery, EarlyView.
This article investigates how persistent homology, persistent Laplacians, and persistent commutative algebra reveal complementary geometric, topological, and algebraic invariants or signatures of real‐world data. By analyzing shapes, synthetic complexes, fullerenes, and biomolecules, the article shows how these mathematical frameworks enhance ...
Yiming Ren, Guo‐Wei Wei
wiley   +1 more source

Contact Force Estimation of Continuum Robots without Embedded Sensors: A Review

Advanced Intelligent Systems, EarlyView.
This review surveys methods for estimating contact forces in continuum robots without embedded sensors. It explains why contact force matters, classifies force patterns, and groups existing methods into three approaches based on actuation, deformation, and environment information.
An Hu, Yu Sun
wiley   +1 more source

Dual Entropy Source Physical Unclonable Functions of Reconfigurable Feedback Field‐Effect Transistors with Polycrystalline Silicon Channels

Advanced Intelligent Systems, EarlyView.
Physically unclonable functions (PUFs) of reconfigurable feedback field‐effect transistors (R‐FBFETs) with polycrystalline silicon channels are designed for dual entropy sources. The uniqueness and reliability of the dual entropy source PUF are verified by inter‐ and intra‐Hamming distances of 49.13% and 3.47%, respectively, as well as NIST statistical
Taeho Park, Yunwoo Shin, Hyojoo Heo, Kyoungah Cho, Sangsig Kim   +4 more
wiley   +1 more source