Results 201 to 210 of about 38,050 (269)

Operando Electrochemical Formation of Integrated Ni‐Fe Oxyhydroxide Anode for Durable Anion Exchange Membrane Water Electrolyzer

open access: yesAdvanced Science, EarlyView.
The interfacial stability and activity of Ni‐Fe‐based AEMWE anodes can be directly enhanced by operando voltage‐cycling in a FeOOH‐containing electrolyte. This process simultaneously induces Ni oxidation and Fe incorporation, forming an integrated, porous (Fe, Ni)OOH layer with high conductivity and durability.
Euntaek Oh   +10 more
wiley   +1 more source

A Worm‐Inspired Origami Robot with Multimodal Locomotion for Adaptive Mobility in Complex Pipeline Environments

open access: yesAdvanced Science, EarlyView.
An origami worm‐inspired robot achieves multimodal locomotion in confined pipelines through mechatronic integration that embeds actuation, control, and communication within each origami module. Large, reversible configuration and dimensional changes enable 25 gaits synthesized by a unified framework across peristaltic, inchworm, and wheel‐rolling modes
Qiwei Zhang   +6 more
wiley   +1 more source

Electrochemically Induced Interphase by Complex Hydride Anions in Argyrodite Solid Electrolytes for Stable Lithium Metal All‐Solid‐State Batteries

open access: yesAdvanced Science, EarlyView.
Complex hydride anion substitution in argyrodite electrolytes has attracted attention for improving interfacial stability, yet the influence of these anions at Li metal interfaces remains unclear. This work shows that electrochemically formed BH4−‐derived interphases enable stable high‐current full‐cell cycling.
Sangho Lee   +13 more
wiley   +1 more source

Large‐Scale Growth of Self‐Poled Ferroelectric Rashba Semiconductor α‐GeTe(111) Thin Films: A Crucial Step Towards Future CMOS‐Compatible Ferroelectric Spintronic Devices

open access: yesAdvanced Science, EarlyView.
Ferroelectric Rashba semiconductors promise ultralow‐power devices but lack industry‐quality films. This work demonstrates CMOS‐compatible fabrication of high‐quality α‐GeTe(111) films via magnetron sputtering, enabled by a 5 nm Sb2Te3 seed layer. Structural and ferroelectric analyses show robust, switchable polarization comparable to MBE films, paving
Jules Lagrave   +14 more
wiley   +1 more source

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