Results 141 to 150 of about 1,208,588 (320)

Geometric and algebraic structure at infinity of discrete time linear periodic systems

, 1989
Sauro Longhi, Anna Maria Perdon, G. Conte   +2 more
openalex   +1 more source

Lagrangian multiform structure of discrete and semi-discrete KP systems

Open Communications in Nonlinear Mathematical Physics
A variational structure for the potential AKP system is established using the novel formalism of a Lagrangian multiforms. The structure comprises not only the fully discrete equation on the 3D lattice, but also its semi-discrete variants including several differential-difference equations asssociated with, and compatible with, the partial difference ...
openaire   +4 more sources

Artificial Intelligence‐Driven Development in Rechargeable Battery Materials: Progress, Challenges, and Future Perspectives

Advanced Functional Materials, EarlyView.
AI is transforming the research paradigm of battery materials and reshaping the entire landscape of battery technology. This comprehensive review summarizes the cutting‐edge applications of AI in the advancement of battery materials, underscores the critical challenges faced in harnessing the full potential of AI, and proposes strategic guidance for ...
Qingyun Hu, Junyuan Lu, Jian Hui, Ziyuan Rao, Yang Ren, Hong Wang   +5 more
wiley   +1 more source

A DISCRETE METHOD ON FRAMED STRUCTURE ANALYSIS : Part-2 On EIasto-Plastic and Collapse Analysis of One-Dimensional Members

, 1982
Kazuo Kondoh
openalex   +2 more sources

Synergistic Osteogenesis After Co‐Administration of cmRNAs Encoding BMP‐2 and BMP‐7 Utilizing a Transcript‐Activated Matrix

Advanced Functional Materials, EarlyView.
This study demonstrates that the dual delivery of BMP‐2/‐7 coding cmRNAs for bone healing is demonstrated as feasible, safe, and highly osteogenic. Compared to single BMP‐2 or BMP‐7 cmRNAs, the combination enhances the production of both mineral and organic components of the extracellular matrix when delivered using a collagen‐HA scaffold, supporting ...
Claudia Del Toro Runzer, Joanna M. Sadowska, Nadia Roumans, Christian Plank, Christopher H. Evans, Fergal J. O'Brien, Martijn van Griensven, Elizabeth R. Balmayor   +7 more
wiley   +1 more source

Optimal Shape Design of Mechanical Structure : 1st Repart, Discreted Shape Transformation

, 1983
Teiichi Okouchi, S. Miyata
openalex   +2 more sources

Polymer‐Incorporated Mechanically Compliant Carbon Nanotube Microelectrode Arrays for Multichannel Neural Signal Recording

Advanced Functional Materials, EarlyView.
This work presents a soft microelectrode array based on vertically aligned carbon nanotube (CNT) forests, combining high conductivity with mechanical softness. A densification process and air‐pressure‐assisted flexibilization improve structural integrity, ensuring stable insertion and reduced inflammation.
Hyeonhee Roh, Kwangjun Kim, Chaesung Kim, Minju Kim, Minwook Kim, Sangjun Sim, Jongbaeg Kim, Jong G. Ok, Maesoon Im   +8 more
wiley   +1 more source

Polaronic and Electrochemical Signatures in Group IVB (Ti, Zr, Hf) Oxides: Unified SKP–DFT Insights for Tunable Transport in Energy and Electronic Devices

Advanced Functional Materials, EarlyView.
Charge carrier concentration and mobility in TiO2, ZrO2, and HfO2 powder films are experimentally mapped as a function of temperature. The results uncover polaron‐mediated transport regimes and field‐activated conduction, enabling the design of oxide‐based electronic and energy devices with thermally tunable functionality.
Beatriz Moura Gomes, Júlia Holtz, Maria Luís Pinto, Maria Helena Braga   +3 more
wiley   +1 more source

Symplectic and Poisson structures of certain moduli spaces. II. Projective representations of cocompact discrete planar groups

, 1994
Johannes Huebschmann
openalex   +2 more sources

Electrically Binary and Ternary Convertible CMOS Inverter and Logic Gate Using Complementary Field‐Effect Transistors Based on Vertically Stacked MoS2/WSe2 n‐/p‐ Field‐Effect Transistors

Advanced Functional Materials, EarlyView.
In this work, a reconfigurable T‐CMOS inverter based on vertically stacked MoS2 and WSe2 MOSFETs with a gate‐tunable MoS2 resistor, enabling stable ternary logic, is demonstrated. The T‐CMOS inverter supports electrical switching between ternary and binary modes and is further extended to implement ternary NAND (NMIN) and NOR (NMAX) logic gates ...
Changwook Lee, Dongyoung Kim, Eunyeong Yang, Jiwon Ma, Kibum Kang, Jiwon Chang   +5 more
wiley   +1 more source