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Synergistic Radiation Effects in PPD CMOS Image Sensors Induced by Neutron Displacement Damage and Gamma Ionization Damage [PDF]
SensorsThe synergistic effects on the 0.18 µm PPD CISs induced by neutron displacement damage and gamma ionization damage are investigated. The typical characterizations of the CISs induced by the neutron displacement damage and gamma ionization damage are ...
Zu-Jun Wang +9 more
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Study of Neutron Radiation Effects in Optical MOS Solid-State Relays [PDF]
SensorsOptical MOS solid-state relays provide electrical isolation and favorable switching performance, making them suitable as isolated switching interfaces for optoelectronic sensors used in radiation monitoring systems, high-energy physics accelerator ...
Zijie He +6 more
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Investigation and feasibility study of using components with different categories from the perspective of radiation damage in LEO and GEO orbits [PDF]
فصلنامه علوم و فناوری فضایی, 2021 Space radiation can affect the performance and reliability of components in space systems. This paper focuses on the investigation of three types of radiation damage including ionizing dose, displacement damage, and single event damage using OMERE ...
Hamideh Daneshvar +4 more
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Crystals, 2023 Ni–graphene nanocomposites with high-density interfaces have enormous potential as irradiation-tolerant materials applied in Gen-IV reactors. Nevertheless, the mechanism wherein the intrinsic and/or irradiation-induced defects of graphene affect the ...
Hai Huang +3 more
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Calculation and measurement of leakage current variations due to displacement damage for a silicon diode exposed to space protons [PDF]
فصلنامه علوم و فناوری فضایی, 2020 The presence of ionizing radiation in the space environment, due to trapped particles, solar particles and cosmic rays can be a serious threat to the proper functioning of electronic components used in satellites and spacecraft. In this work, the leakage
Sara Shoorian +3 more
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Micromachines, 2023 SiC devices have been typically subjected to extreme environments and complex stresses during operation, such as intense radiation and large diurnal amplitude differences on the lunar surface.
Yaolin Chen +3 more
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Modeling the Displacement Damage on Trigger Current of Anode-Short MOS-Controlled Thyristor
IEEE Journal of the Electron Devices Society, 2020 The MOS-controlled Thyristor (MCT) has been characterized by MOS-gating, high current rise rate, and high blocking capability. The anode short MCT (AS-MCT) is distinguished from conventional MCT by an anode-short structure, which develops a normally-off ...
Lei Li +7 more
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Influence of Displacement Damage Effect on AlGaN/GaN HEMT Devices
Yuanzineng kexue jishu, 2023 AlGaN/GaN high electron mobility transistors (HEMTs) have excellent physical and chemical stability, which gives it great potential for use in consumer, industrial and space applications.
CHEN Baiwei1,2;SUN Changhao1,2;MA Teng2;SONG Hongjia1;WANG Jinbin1;PENG Chao2;ZHANG Zhangang2;LEI Zhifeng2;LIANG Chaohui2,*;ZHONG Xiangli1,*
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Quantum Beam Science, 2021 The core facility of the Wakasa Wan Energy Research Center (WERC) consists of three ion accelerators: a synchrotron, a tandem accelerator and an ion-implanter.
Satoshi Hatori +3 more
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Electrical characterization of commercial NPN bipolar junction transistors under neutron and gamma irradiation [PDF]
Nuclear Technology and Radiation Protection, 2014 Electronics components such as bipolar junction transistors, diodes, etc. which are used in deep space mission are required to be tolerant to extensive exposure to energetic neutrons and ionizing radiation.
OO Myo Min +6 more
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