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0.04 Hz relative optical-frequency stability in a 1.5 mu m distributed-Bragg-reflector (DBR) laser
IEEE Photonics Technology Letters, 1989The optical frequency of a 1.5- mu m distributed-Bragg-reflector (DBR) laser is stabilized against that of a master laser by heterodyne-type frequency locking with a phase-locked loop (PLL). Despite the laser's wide linewidth of 16 MHz, stable PLL operation with an optical hold-in range of 26 GHz is realized, and residual frequency fluctuations are ...
O. Ishida, H. Toba, Y. Tohmori
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SPIE Proceedings, 2000
A novel semiconductor/superlattice AlAs/[GaAs/AlAs] DBR has been obtained through replacing the Al x Ga 1-x As in the AlAs/Al x Ga 1-x As DBR with GaAs/AlAs superlattice. In experiment, a p-type of this kind of 19-period DBR has been grown by V80H MBE system.
Changling Yan +3 more
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A novel semiconductor/superlattice AlAs/[GaAs/AlAs] DBR has been obtained through replacing the Al x Ga 1-x As in the AlAs/Al x Ga 1-x As DBR with GaAs/AlAs superlattice. In experiment, a p-type of this kind of 19-period DBR has been grown by V80H MBE system.
Changling Yan +3 more
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Applied Physics Letters
Over the past few years, the demand for high-performance optoelectronic devices has intensified, and the limitations of silicon have become a critical bottleneck. To overcome these constraints while ensuring compatibility with existing CMOS technology, the search for alternative materials has become imperative.
Kritika Bhattacharya +6 more
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Over the past few years, the demand for high-performance optoelectronic devices has intensified, and the limitations of silicon have become a critical bottleneck. To overcome these constraints while ensuring compatibility with existing CMOS technology, the search for alternative materials has become imperative.
Kritika Bhattacharya +6 more
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Microelectronics Reliability, 1999
Abstract Changes in the threshold current and wavelength tuning characteristics due to the degradation of the active region and passive region in buried heterostructure (BH) distributed Bragg reflector (DBR) lasers are experimentally investigated. These changes are caused by the decrease in recombination carrier lifetime due to degradation.
H. Mawatari, M. Fukuda, Y. Tohmori
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Abstract Changes in the threshold current and wavelength tuning characteristics due to the degradation of the active region and passive region in buried heterostructure (BH) distributed Bragg reflector (DBR) lasers are experimentally investigated. These changes are caused by the decrease in recombination carrier lifetime due to degradation.
H. Mawatari, M. Fukuda, Y. Tohmori
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Design of GaInAs/InP membrane p-i-n photodiode with back-end distributed-Bragg-reflector (DBR)
CLEO Pacific Rim Conference, 2018A GalnAs/InP membrane p-i-n photodiode (PD) integrated with a back end DBR was theoretically investigated under a condition of the back reflection of −30dB. As the result, it was found that the 3dB bandwidth of 17 GHz can be obtained with the absorption section length of 12 μm.
Xu Zheng +4 more
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2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC), 2017
Tunable laser sources are required in a variety of applications such as absorption spectroscopy, optical communication and coherent optical detection schemes [1]. The tunability of these devices is often based on external cavities, which utilizes movable external gratings to select and tune the wavelength.
Mahmoud Tawfieq +7 more
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Tunable laser sources are required in a variety of applications such as absorption spectroscopy, optical communication and coherent optical detection schemes [1]. The tunability of these devices is often based on external cavities, which utilizes movable external gratings to select and tune the wavelength.
Mahmoud Tawfieq +7 more
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2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest., 2005
We demonstrated a wide-wavelength (1533-1568 nm), high-output power (30 mW) operation in a short-cavity DBR laser array by incorporating an active single quantum well in DBR mirrors.
H. Arimoto +8 more
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We demonstrated a wide-wavelength (1533-1568 nm), high-output power (30 mW) operation in a short-cavity DBR laser array by incorporating an active single quantum well in DBR mirrors.
H. Arimoto +8 more
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A 1.65 μm three-section distributed Bragg reflector (DBR) laser for CH4 gas sensors
Journal of Semiconductors, 2013A 1.65-μm three-section distributed Bragg reflector (DBR) laser for CH4 gas sensors is reported. The DBR laser has a wide tunable range covering the R3 and R4 methane absorption line manifolds. The wavelength tunability properties, temperature stability and laser linewidth are characterized and analyzed.
Bin Niu +7 more
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SPIE Proceedings, 2001
The realization of single-mode Distributed Feedback (DFB) and Distributed Bragg Reflector (DBR) lasers, based on surface grating structures is of considerable interest. Such devices offer a relatively simple grating fabrication process without complicated multistep-epitaxial growth or regrowth, as required in more conventional devices.
Hery Susanto Djie +2 more
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The realization of single-mode Distributed Feedback (DFB) and Distributed Bragg Reflector (DBR) lasers, based on surface grating structures is of considerable interest. Such devices offer a relatively simple grating fabrication process without complicated multistep-epitaxial growth or regrowth, as required in more conventional devices.
Hery Susanto Djie +2 more
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Japanese Journal of Applied Physics, 1988
A modified GaInAsP/InP BIG-DBR laser for restricting leakage current via the passive DBR region is proposed and realized by using an inner-island substrate with a quaternary blocking layer as well as employing an island-type active mesa process. As a result, superior lasing properties were attained such as a low CW threshold current of 22 mA, a ...
W. Wang +5 more
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A modified GaInAsP/InP BIG-DBR laser for restricting leakage current via the passive DBR region is proposed and realized by using an inner-island substrate with a quaternary blocking layer as well as employing an island-type active mesa process. As a result, superior lasing properties were attained such as a low CW threshold current of 22 mA, a ...
W. Wang +5 more
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