Results 191 to 200 of about 36,225 (338)

Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System

open access: yesAdvanced Functional Materials, EarlyView.
We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang   +6 more
wiley   +1 more source

Microporous Microgel Assemblies Facilitating the Recruitment and Osteogenic Differentiation of Progenitor Cells for Bone Regeneration

open access: yesAdvanced Functional Materials, EarlyView.
There is a significant need for biomaterials with well‐defined stability and bioactivity to support tissue regeneration. In this study, we developed a tunable microgel platform that enables the decoupling of stiffness from porosity, thereby promoting bone regeneration.
Silvia Pravato   +9 more
wiley   +1 more source

Finding Packet Dropper and Collecting Missing Packet due to Packet Dropping Attackers in Mobile Adhoc Network Using Divide and Conquer Algorithm

open access: bronze
S. Hemalatha   +62 more
openalex   +1 more source

Ion‐Selective Microporous Membranes via One‐Step Copolymerization Enable High‐Performance Redox Flow Batteries

open access: yesAdvanced Functional Materials, EarlyView.
A scalable one‐step copolymerization strategy is developed to produce low‐cost microporous ion exchange membranes that boost both the efficiency and lifespan of flow batteries. When combined with organic electrolytes in aqueous systems, these membranes enable safe and cheap flow battery energy storage, supporting the widespread integration of renewable
Jiaye Liu   +7 more
wiley   +1 more source

Dynamic Control of Synaptic Plasticity by Competing Ferroelectric and Trap‐Assisted Switching in IGZO Transistors with Al2O3/HfO2 Dielectrics

open access: yesAdvanced Functional Materials, EarlyView.
A frequency‐tunable ferroelectric synaptic transistor based on a buried‐gate InGaZnO channel and Al2O3/HfO2 dielectric stack exhibits linear and reversible weight updates using single‐polarity pulses. By switching between ferroelectric and trap‐assisted modes depending on input frequency, the device simplifies neuromorphic circuit design and achieves ...
Ojun Kwon   +8 more
wiley   +1 more source

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