Results 161 to 170 of about 39,319 (205)
Some of the next articles are maybe not open access.

Related searches:

A novel vertical deep trench RESURF DMOS (VTR-DMOS)

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094), 2002
A new super junction (SJ)-DMOS device, the vertical deep trench RESURF DMOS or VTR-DMOS, is proposed. The VTR-DMOS is a conventional vertical N-channel DMOS with a deep trench adjacent to the gate. The trench creates a vertical sidewall into which boron is solid source diffused to form a P-type doping pillar which is charge balanced to the N-type ...
J. Glenn, J. Siekkinen
openaire   +1 more source

A new VLSI memory cell using DMOS technology (DMOS cell)

IEEE Transactions on Electron Devices, 1982
A high-density dynamic memory cell using DMOS technology (DMOS cell) is proposed. A DMOS cell consists of an n-channel DMOSFET as a read gate and a p-channel MOSFET as a write gate with extensive node sharing. Since n-DMOSFET threshold state is nondestructively detected, the readout signal voltage is almost invariant to scaling. The cell area, which is
K. Terada   +3 more
openaire   +1 more source

The DMO is dead. Long live the DMO (or, why DMO managers don’t care about post-structuralism)

Tourism Recreation Research, 2016
Destination marketing and/or management organisations (DMOs) are undoubtedly a significant component of the tourism system.
C. Michael Hall, Ekant Veer
openaire   +1 more source

What is DMO coverage?

SEG Technical Program Expanded Abstracts 1997, 1997
‘Coverage’ or ‘fold’ is defined as the multiplicity of common‐midpoint (CMP) data. For CMP stacking the coverage is consistent with the number of traces sharing a common reflection point on flat subsurface reflectors. This relationship is not true for dipping reflectors.
openaire   +1 more source

Smart power with 1200 V DMOS

Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's, 1997
This paper describes a smart-power-process which integrates a vertical 1200 V DMOS power transistor and low voltage CMOS circuits. For isolation purpose between the CMOS part and the high voltage power device, the local SIMOX process is used with a p-n junction in series.
Vogt, Franz P.   +3 more
openaire   +1 more source

Home - About - Disclaimer - Privacy