Results 231 to 240 of about 2,458,322 (294)

Defect‐Templated Phase Engineering in Atomically Thin Metals

open access: yesAdvanced Materials, EarlyView.
Graphene defects are transformed from passive imperfections into programmable templates for phase‐selective growth of atomically thin silver. Plasma‐generated boundary defects favor Ag(1), whereas sp3‐rich zero‐layer graphene promotes Ag(2). This defect‐directed intercalation links local graphene chemistry to crystalline phase, electronic structure ...
Arpit Jain   +25 more
wiley   +1 more source

Frequency-domain multi-scale hybrid attention for pathological image classification. [PDF]

open access: yesSci Rep
Zhang Y   +10 more
europepmc   +1 more source

Deterministic Field‐Free Switching of Perpendicular Magnetization by Bulk Mirror Symmetry Broken Bi1−xSbx (012) with High Spin Hall Conductivity

open access: yesAdvanced Materials, EarlyView.
Crystal orientation and domain engineering enable bulk mirror symmetry breaking in Bi1−xSbx, resulting in ultralow current‐induced switching of perpendicular magnetization without an external field. By exploiting single‐domain Bi1−xSbx (012), the authors demonstrate an out‐of‐plane spin Hall conductivity of ∼1.12×105ℏ2eΩ−1m−1$ \sim \!1.12 \ensuremath ...
Seungwon Rho   +6 more
wiley   +1 more source

Conformal Thermoreversible Gelatin‐Based Gel for High‐Fidelity Electrophysiological Recording and Acute Peripheral Nerve Interfacing

open access: yesAdvanced Materials, EarlyView.
A thermoreversible gelatin‐based gel forms a soft, conformal bioelectronic interface on complex biological surfaces. The flowable precursor penetrates hair‐dense regions, solidifies in situ, and maintains low impedance through adaptive contact and hydration retention.
Ruinan Hao   +9 more
wiley   +1 more source

Polar Wurtzite NbAlN: A Transition‐Metal Nitride Alloy for Polarization‐Engineered GaN Heterostructures

open access: yesAdvanced Materials, EarlyView.
A novel polar wurtzite alloy, NbAlN, is demonstrated as a transition‐metal‐containing polar barrier for GaN heterostructures. Nb atoms form coherent nanoscale enrichment within the wurtzite lattice without disrupting metal polarity. This study demonstrates that transition metals can be integrated into polar nitrides to enable polarization‐related ...
Atsushi Kobayashi   +12 more
wiley   +1 more source

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