Results 151 to 160 of about 4,333 (278)
Imitation learning for legged robot locomotion: a survey. [PDF]
Mirza KZ, Singh S.
europepmc +1 more source
Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics
Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha +18 more
wiley +1 more source
The transmission ability in a population of elite tetraploid potatoes. [PDF]
Aalborg T +5 more
europepmc +1 more source
Trap state engineering in inverted organic photodetectors (OPDs) is achieved via combined layer‐by‐layer (LbL) processing and poly(N‐vinylcarbazole) (PVK) incorporation. LbL reduces the trap density while PVK additives gradually shift trap states from shallow band‐edge to deep mid‐gap levels, tailoring the energy distribution.
Jingwei Yi +10 more
wiley +1 more source
Understanding the influence of power dynamics in intersectoral collaboration: A realist evaluation in Assam, India. [PDF]
Aivalli P +3 more
europepmc +1 more source
A single cell type Electro‐chromo‐emissive (ECECL) device integrating synchronized electrochromic (EC) and electrochemiluminescent (ECL) functions is developed using a mixed ionic‐electronic conductor (MIEC). A MIEC layer reduces ionic/electronic resistance, enabling ultrafast switching and enhanced optical contrast.
Hwandong Jang +5 more
wiley +1 more source
Optimizing healthcare supply chain capacity planning during disasters using fuzzy AHP and TOPSIS methods. [PDF]
Ommane Y +4 more
europepmc +1 more source
Topological van der Waals contacts represent a new class of electrodes for 2D semiconductors, enabling precise control of the Schottky barrier height (SBH) and contact resistance (RC) through interlayer distance and orbital hybridization engineering. In Se‐based transition metal dichalcogenides, these contacts achieve an ultralow SBH of 7 meV, RC of 0.
Soheil Ghods +15 more
wiley +1 more source

