Results 151 to 160 of about 4,333 (278)

Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics

open access: yesAdvanced Functional Materials, EarlyView.
Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha   +18 more
wiley   +1 more source

The transmission ability in a population of elite tetraploid potatoes. [PDF]

open access: yesPlant Genome
Aalborg T   +5 more
europepmc   +1 more source

Trap‐Modified Inverted Organic Photodetectors via Layer‐by‐Layer Processing with Poly(N‐vinylcarbazole) Additives

open access: yesAdvanced Functional Materials, EarlyView.
Trap state engineering in inverted organic photodetectors (OPDs) is achieved via combined layer‐by‐layer (LbL) processing and poly(N‐vinylcarbazole) (PVK) incorporation. LbL reduces the trap density while PVK additives gradually shift trap states from shallow band‐edge to deep mid‐gap levels, tailoring the energy distribution.
Jingwei Yi   +10 more
wiley   +1 more source

Synchronized Electro‐Chromo‐Emissive Devices Using a Mixed Ionic‐Electronic Conductive Layer for XR Applications

open access: yesAdvanced Functional Materials, EarlyView.
A single cell type Electro‐chromo‐emissive (ECECL) device integrating synchronized electrochromic (EC) and electrochemiluminescent (ECL) functions is developed using a mixed ionic‐electronic conductor (MIEC). A MIEC layer reduces ionic/electronic resistance, enabling ultrafast switching and enhanced optical contrast.
Hwandong Jang   +5 more
wiley   +1 more source

Selective Charge Injection via Topological van der Waals Contacts for Barrier‐Free p‐Type TMD Transistors

open access: yesAdvanced Functional Materials, EarlyView.
 Topological van der Waals contacts represent a new class of electrodes for 2D semiconductors, enabling precise control of the Schottky barrier height (SBH) and contact resistance (RC) through interlayer distance and orbital hybridization engineering. In Se‐based transition metal dichalcogenides, these contacts achieve an ultralow SBH of 7 meV, RC of 0.
Soheil Ghods   +15 more
wiley   +1 more source

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