Results 231 to 240 of about 1,313,618 (354)
Quantifying Spin Defect Density in hBN via Raman and Photoluminescence Analysis
Advanced Functional Materials, EarlyView.An all‐optical method is presented for quantifying the density of boron vacancy spin defects in hexagonal boron nitride (hBN). By correlating Raman and photoluminescence signals with irradiation fluence, defect‐induced Raman modes are identified and established an relationship linking optical signatures to absolute defect densities. This enables direct
Atanu Patra +8 more
wiley +1 more source
Wafer‐Scale Synthesis of Mithrene and its Application in UV Photodetectors
Advanced Functional Materials, EarlyView.A controlled tarnishing step on the silver surface precedes the solid‐vapor‐phase chemical transformation into silver phenylselenolate thin films. The approach yields crystals exceeding 1 µm with improved in‐plane orientation. Integration on graphene phototransistors demonstrates high photoresponsivity, positioning mithrene as a promising material for ...
Maryam Mohammadi +8 more
wiley +1 more source
Designing high-performance infrared optoelectronic materials: indium-site substitution in LiInSe<sub>2</sub> with Al, Ga, Sn, and Sb. [PDF]
RSC AdvChen J +9 more
europepmc +1 more source
Self‐Trapped Hole Migration and Defect‐Mediated Thermal Quenching of Luminescence in α‐ and β‐Ga2O3
Advanced Functional Materials, EarlyView.Temperature‐dependent photoluminescence and first‐principles calculations reveal self‐trapped hole migration as the microscopic origin of thermal quenching in α‐ and β‐Ga2O3. The low migration barrier in α‐Ga2O3 enables defect trapping and enhances blue luminescence, while the higher barrier in β‐Ga2O3 preserves ultraviolet emission at elevated ...
Nima Hajizadeh +11 more
wiley +1 more source