This review examines passive, active, and hybrid liquid manipulation strategies, highlighting hybrid approaches as an emerging route to reconcile energy efficiency with adaptive control. By actively reconstructing passive surfaces to store programmable interfacial energy, hybrid systems enable flexible yet low‐power liquid transport, with perspectives ...
Jiaqi Miao +3 more
wiley +1 more source
Risk factors for mortality in prostatic abscess: Insights into patient characteristics and drainage practices. [PDF]
Tsai YC, Li JR, Hsu CY, Tsai CA.
europepmc +1 more source
Barrier‐Assisted Plasma Doping for Spatially Selective Resistance Engineering in MoS2 Transistors
Barrier‐assisted NH3 plasma doping enables damage‐free, spatially selective carrier modulation in monolayer MoS2 transistors. An ultrathin pV3D3/Al2O3 protective‐dielectric stack acts as a chemical filter that allows NHx radicals to reach the MoS2 surface while blocking plasma damage. This process achieves a high electron concentration of 4.3 × 1013 cm−
Inseong Lee +15 more
wiley +1 more source
Multi-Route Administration Therapy for Intracranial <i>Acinetobacter baumannii</i> Infection After Postoperative Cerebral Hemorrhage: A Case Report. [PDF]
Wu H +5 more
europepmc +1 more source
Direct Growth of 2D Bilayers on Au(111) for Low‐Coercive Sliding Ferroelectricity
Controlled CVD growth of stacking‐defined bilayer ReS2 on Au(111) enables parallel‐stacked bilayers with intrinsic sliding ferroelectricity, a strong piezoelectric response, and an ultralow coercive voltage. Atomic‐resolution imaging and in situ measurements further reveal the decisive role of clean interfaces in achieving low‐barrier ferroelectric ...
Honglin Chen +7 more
wiley +1 more source
Intracavitary Drainage Followed by Lobectomy for a Giant Bulla Causing Respiratory Failure due to Severe Mediastinal Compression: A Case Report. [PDF]
Tokutake H +6 more
europepmc +1 more source
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci +12 more
wiley +1 more source
Time-dependent microbiology of peripancreatic drainage fluid in severe acute pancreatitis: a prospective real-world observational study using metagenomic sequencing and culture. [PDF]
Wu Y, Gao Y, Fang Z, Huang W, Guo F.
europepmc +1 more source
Bandgap‐Dependent Band‐to‐Band Tunneling in Carbon Nanotube Transistors
We systematically investigate bandgap‐dependent BTBT in SWCNT transistors by comparing wide‐bandgap (6,5) (Eg≈1.13 eV), medium‐bandgap HiPco, and narrow‐bandgap Arc‐discharge (Eg≈0.59 eV) SWCNT networks. The narrow‐bandgap networks show stronger BTBT, higher off‐state leakage, and lower on/off ratio, while wide‐bandgap (6,5) devices suppress BTBT and ...
Yuxiang Wei +10 more
wiley +1 more source
Recurrent auricular haematoma following nocturnal headphone compression: a case report. [PDF]
Alsaqr M, Alotaibi E, Alkarzae M.
europepmc +1 more source

