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Visible-Light-Induced Radical Cascade [4 + 2]/[4 + 2] Cycloaddition of Underexplored <i>N</i>-Acryloyl Indoles To Access Dihydropyrido[1,2-<i>a</i>]-indolones. [PDF]
Bishir C +5 more
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Adaptive path tracking control of unmanned agricultural machinery with fixed-time super-twisting sliding mode based on RLS-ELM. [PDF]
Chen Z, Yin J, Farhan SM, Lin Z, Zhou M.
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IEEE transactions on industrial electronics (1982. Print), 2022
Conventional digital LLC synchronous rectifier (SR) control typically uses detection circuits to sense the drain-source voltage of SR MOSFET in low output voltage applications, or gives SR duty cycle only considering the switching frequency in the ...
Haoran Li +6 more
semanticscholar +1 more source
Conventional digital LLC synchronous rectifier (SR) control typically uses detection circuits to sense the drain-source voltage of SR MOSFET in low output voltage applications, or gives SR duty cycle only considering the switching frequency in the ...
Haoran Li +6 more
semanticscholar +1 more source
IEEE transactions on power electronics, 2022
In conventional synchronous rectifier (SR) driving schemes, the drain to source voltage of SR is detected to generate its driving signal. However, the driving signal by this method will lose a portion of duty cycle due to the parasitic inductance in SR ...
Haiming Yu +3 more
semanticscholar +1 more source
In conventional synchronous rectifier (SR) driving schemes, the drain to source voltage of SR is detected to generate its driving signal. However, the driving signal by this method will lose a portion of duty cycle due to the parasitic inductance in SR ...
Haiming Yu +3 more
semanticscholar +1 more source
IEEE transactions on power electronics, 2021
For 1-MHz GaN LLC converters with 1-kV input, the switching speed of eGaN high-electron mobility transistors (HEMTs) is as fast as 6 ns, which results in dv/dt up to 200 kV/μs. It poses serious challenge for synchronous rectification (SR).
Xinyi Zhu +8 more
semanticscholar +1 more source
For 1-MHz GaN LLC converters with 1-kV input, the switching speed of eGaN high-electron mobility transistors (HEMTs) is as fast as 6 ns, which results in dv/dt up to 200 kV/μs. It poses serious challenge for synchronous rectification (SR).
Xinyi Zhu +8 more
semanticscholar +1 more source
LTPS Pixel Driving Scheme to Improve Motion Blur for AMOLED Displays
IEEE Transactions on Electron Devices, 2022This article proposes a new driving scheme based on an n-type low-temperature polycrystalline silicon (LTPS) four-transistor-two-capacitor (4T2C) pixel circuit to improve the quality of motion images of active matrix organic light-emitting diode (AMOLED)
Jung-Min Lee +7 more
semanticscholar +1 more source
Rotatory microgripper based on a linear electrostatic driving scheme
Microelectronic Engineering, 2021Nonlinearity is a common problem for many types of microgrippers and can make it difficult to achieve high precision control over the entire input variation range.
Y. Hao +4 more
semanticscholar +1 more source
Adaptive Driving Scheme for ZVS and Minimizing Circulating Current in MHz CRM Converters
IEEE transactions on power electronics, 2021The synchronous rectifier (SR) turn-off time should be accurately controlled to achieve zero voltage switching (ZVS) while minimizing circulating current in pulsewidth modulation converters operating at critical conduction mode.
Kangping Wang +4 more
semanticscholar +1 more source

