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Investigation of Adaptive Synchronous Rectifier (SR) Driving Scheme for LLC/CLLC Resonant Converter in EV On-Board Chargers

Applied Power Electronics Conference, 2020
For LLC/CLLC resonant converters, synchronous rectifiers (SR) are desired to be turned off at the current zerocrossing moment to avoid the additional conduction loss and the circulation current.
Zhengda Zhang   +4 more
semanticscholar   +1 more source

The effect of odd-even driving scheme on PM2.5 and PM1.0 emission

Transportation Research Part D: Transport and Environment, 2019
According to a global survey of 1600 cities by WHO in 2015, Delhi was found to be the most polluted city in the world, highlighting immediate need to bring in appropriate and effective measures to ensure a healthy air quality throughout the city.
R. Mishra   +3 more
semanticscholar   +1 more source

A Low-Power Digital Pixel Driving Scheme for Single-Pulse-PWM-Based Display Using AND-Embedded Pixel Circuits

IEEE transactions on circuits and systems for video technology (Print), 2019
A new digital pixel driving scheme is presented for reducing power in the column-line drivers in a single-pulse-PWM-based display. Rather than updating the digital pixel memory value for every access of the memory, the proposed driving scheme utilizes ...
Je-Kwang Cho, M. Jeong
semanticscholar   +1 more source

Digital Implementation of Adaptive Synchronous Rectifier (SR) Driving Scheme for High-Frequency LLC Converters With Microcontroller

IEEE transactions on power electronics, 2018
Synchronous rectifiers (SRs) are important for high-output-current LLC converters in order to reduce the secondary conduction loss. Conventional SR driving schemes are not suitable for high-frequency LLC converters: the analog driving schemes will lose ...
Chao Fei, Qiang Li, F. Lee
semanticscholar   +1 more source

Variation-Tolerant WL Driving Scheme for High-Capacity NAND Flash Memory

IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2019
Research on a word-line (WL) driving scheme is essential because the effect of WL parasitic resistance and capacitance (RC) is more severe for high-capacity NAND flash memories.
J. Ko   +7 more
semanticscholar   +1 more source

An Integrated Scheme for Coefficient Estimation of Tire Road Friction with mass parameter mismatch under Complex driving scenarios

IEEE transactions on industrial electronics (1982. Print), 2021
Accurate knowledge of tire road friction coefficient (TRFC) contributes to the optimization of driver maneuvers for further improving the safety of intelligent vehicles. The performance of existing estimation methods would decline when a vehicle performs
Yan Wang   +6 more
semanticscholar   +1 more source

A Novel Deep Q-Learning-Based Air-Assisted Vehicular Caching Scheme for Safe Autonomous Driving

IEEE transactions on intelligent transportation systems (Print), 2021
The safety driving-related content demands of vehicle users increase rapidly, especially with the development of autonomous driving. It is significantly necessary to obtain the safety-related transportation information of an area when vehicles are drove ...
Jun-ling Shi   +5 more
semanticscholar   +1 more source

Mobility-Aware Multi-Hop Task Offloading for Autonomous Driving in Vehicular Edge Computing and Networks

IEEE transactions on intelligent transportation systems (Print), 2023
Vehicular Edge Computing (VEC) has gained increasing interest due to its potential to provide low latency and reduce the load in backhaul networks.
Lei Liu   +5 more
semanticscholar   +1 more source

A Novel Enhanced Inverted PWM Driving Scheme for Three-Phase BLDC Motor Drive

2018 IEEE International Conference on Consumer Electronics - Asia (ICCE-Asia), 2018
In this paper, a bootstrap circuit operation for three-phase BLDC motor drive is analyzed theoretically to demonstrate/explain how bootstrap capacitor is refreshed/charged or discharged.
Yongkeun Lee, Jongkwan Kim
semanticscholar   +1 more source

GaN HEMT Driving Scheme of Totem-Pole Bridgeless PFC Converter

IEEE Power Engineering and Automation Conference, 2018
Due to the excellent reverse recovery characteristics, gallium nitride high electron mobility transistor (GaN HEMT) is the ideal device for totem-pole bridgeless PFC circuits.
Binxing Li   +6 more
semanticscholar   +1 more source

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