Results 51 to 60 of about 18,910 (240)

An Integrated Pulsation-Free, Backflow-Free Micropump Using the Analog Waveform-Driven Braille Actuator

open access: yesMicromachines, 2022
The widespread adoption of long-term organs-on-a-chip culture necessitates both active perfusions that mimic physiological flow conditions and minimization of the complexity of microfluidic system and fluid handling.
Kotaro Nishikata   +3 more
doaj   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

open access: yesAdvanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee   +16 more
wiley   +1 more source

An extensible driving model for multiple grayscales colorful electrowetting displays

open access: yesFrontiers in Physics, 2022
As a new type of reflective display technology with paper-like display performance, electrowetting display (EWD) can realize ultra-low power consumption, wide viewing angle and fast response speed.
Taiyuan Zhang   +3 more
doaj   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

open access: yesAdvanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu   +17 more
wiley   +1 more source

Optimizing Bipolar Reset Waveform to Improve Grayscale Stability in Active Matrix Electrowetting Displays

open access: yesMicromachines
The electrowetting display (EWD) device is a new type of electrowetting-on-dielectric (EWOD) equipment that can achieve a paper-like display effect under the control of an electric field.
Taiyuan Zhang   +6 more
doaj   +1 more source

Irradiation‐Induced Spin Bath Evolution and as‐Grown Hydrogen Defects in CVD Diamond Revealed by NV‐Based DEER Spectroscopy

open access: yesAdvanced Functional Materials, EarlyView.
Here, we provide the reader with the current state of the art in the fabrication of high‐T2‐coherence diamond, optimized through the use of double electron–electron resonance (DEER) spectroscopy. We reveal the main as well as yet unidentified spin defects, the reduction of which is essential for reducing the spin bath and fabricating materials for ...
Olga Rubinas   +6 more
wiley   +1 more source

Switching waveform design with gate charge control for power MOSFETs

open access: yesPower Electronic Devices and Components, 2022
The switching waveform design, especially controlling and optimizing the slew rate, is an efficient technique to mitigate the trade-off between decreasing the loss and increasing the noise of the switching power device.
Hirotaka Oomori, Ichiro Omura
doaj   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand   +13 more
wiley   +1 more source

Implementation of Adaptive Real-Time Camouflage System in Visible-Light Band

open access: yesApplied Sciences, 2021
This paper presents an adaptive camouflage system in visible band, featuring a dominant color feature-matching algorithm and pulse width modulation (PWM)-based display driving circuit.
Liying Zhen   +5 more
doaj   +1 more source

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